Temperature dependence of GaN Schottky diodes I–V characteristics

Osvald, J.; Kuzmı́k, J.; Konstantinidis, G.; Lobotka, P.; Georgakilas, A.

doi:10.1016/j.mee.2005.03.004

Cited by 49 publications

(42 citation statements)

References 18 publications

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“…For Ni/Au GaN Schottky diodes have a layout of circular dots. The calculated barrier height by C-V technique at room temperature was 1.17 V. The ideality factor was very close to the unity and has a value of 1.05 [8] . Some investigators [9] have reported two distinct activation energies 0.39 and 0.81 eV for undoped GaN film deposited on degenerate silicon (Si) substrate by reactive rf sputtering .…”

mentioning

confidence: 57%

“…the barrier height (φ b ), the ideality factor (n), and the series resistance (R S ). The I-V G relationship under thermo-ionic emission theory is given by [8] …”

Section: Resultsmentioning

confidence: 99%

“…The temperature dependence of I-V curves of GaN Schottky diodes have been studied [8] . The GaN sample was grown by metal organic chemical vapor deposition (MOCVD) on sapphire with 1.3 µm thick the carrier concentration was 1.4 × 10 16 cm -3…”

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confidence: 99%

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Thermal Study of Gallium Nitride - Metal Contact

Al-Ameer¹

2009

sci

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Abstract. GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an semiconductor of 0.5 µm thickness and carriers concentration 2.2 × 10 19 cm -3 .Metal contacts are prepared by evaporation of metals on GaN films. I-V characteristics are carried out under vacuum in the temperature rang from 90 to 300 K. There is a departure from the nonlinear behavior of the current to a linear one as temperature increases due to the sample series resistance. The saturation current is found to be 8.3 × 10 -7 A at room temperature; then, it increases with temperature. At room temperature, the barrier height at zero-bias and the flat band barrier height are calculated at different temperature and they are found to be 0.66 eV and 0.86 eV, respectively. Moreover, the ideality factor has been calculated at different temperature; it , increases with decreasing temperature and it is equal to 1.26 at room temperature. The serial resistant is found to be to 64 Ω at room temperature.

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mentioning

confidence: 57%

“…the barrier height (φ b ), the ideality factor (n), and the series resistance (R S ). The I-V G relationship under thermo-ionic emission theory is given by [8] …”

Section: Resultsmentioning

confidence: 99%

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Thermal Study of Gallium Nitride - Metal Contact

Al-Ameer¹

2009

sci

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“…Analysis of the I-V characteristics of Schottky diodes on the basis of thermionic emission theory re- veals a decrease in the apparent barrier height Φ br and an increase in the ideality factor n with a decrease in temperature [13][14][15][16][17][18][19][20][21][22]. Therefore, to explain the dependence of the apparent barrier height on temperature and applied bias voltage, an additional carrier transport mechanism such as tunnelling through the barrier was proposed [9,19,[23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, to explain the dependence of the apparent barrier height on temperature and applied bias voltage, an additional carrier transport mechanism such as tunnelling through the barrier was proposed [9,19,[23][24][25][26]. Standard models, including thermionic emission with image force effects, interfacial layer models with and without surface states, and tunnelling do not adequately explain the temperature dependence of the quality factor and the bending of the Richardson plots.…”

Section: Introductionmentioning

confidence: 99%

Reverse-bias leakage in Schottky diodes

Pipinys¹,

Rimeika²,

Lapeika³

2007

Lithuanian J. Phys.

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Reverse-bias current-voltage (IR-V ) characteristics of Al-n / GaAs Schottky diodes have been studied in a temperature range from 92 to 333 K. The results are explained on the basis of phonon-assisted tunnelling model. It is shown that the temperature dependence of the reverse current IR could be caused by the temperature dependence of the electron tunnelling rate from traps in the metal-semiconductor interface to the conduction band of the semiconductor.Temperature-dependent IR-V data obtained by Zhang et al [J. Appl. Phys. 2006; 99: 023703] and Osvald et al [Microelectron. Eng. 2005; 81: 181] for Schottky diodes fabricated on n-GaN are reinterpreted in terms of a phonon-assisted tunnelling model. The temperature and bias voltages dependences of an apparent barrier height (activation energy) observed by other researchers are also explained in the framework of this model.

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Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage

Helal¹,

Benamara²,

Arbia

et al. 2021

Int J Numerical Modelling

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We report on the electrical behavior of Metal/n‐GaAs Schottky structure, using Silvaco‐Atlas software. To study the effect of metal work function ϕm on the performance of various parameters such as saturation current Is, ideality factor n, and barrier height ϕb, we examine a large number of contact materials having different ϕm at room temperature (300 K). The results show a significant dependence between ϕm and the electrical parameters. It is observed that the smaller values of the threshold voltage Vi are obtained for low ϕm. We also find that metals within ϕm ∈ [4.42–5.31] eV give lower n. A linear increase of the barrier height ϕb is mentioned for ϕm ∈ [4.33–5.37] which is in accordance with the theoretical relationship. In addition, the selection of four different metal contact (Cu, Au, Pt, and Ni) is devoted to simulate the Metal/n‐GaAs Schottky structure in a wide temperature range of (100–400 K). This allows us to extract and discuss the influence of temperature on the performance of our proposed device.

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Temperature dependence of GaN Schottky diodes I–V characteristics

Cited by 49 publications

References 18 publications

Thermal Study of Gallium Nitride - Metal Contact

Thermal Study of Gallium Nitride - Metal Contact

Reverse-bias leakage in Schottky diodes

Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage

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