Temperature Dependence of InGaN / GaN Multiple Quantum Well Solar Cells

Belghouthi, Rabeb; Aillerie, Michel

doi:10.1016/j.egypro.2018.11.245

Cited by 11 publications

(7 citation statements)

References 13 publications

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“…In our case, the spectra in Figure were obtained by the 532 nm laser power of 18 mW and the spot size of 50 μm. This would result in the generation rate above 10 22 cm –3 s –1 (see the Supporting Information for details), considering typical values for the absorption coefficient (> 10 5 cm –1 ) and the internal quantum efficiency (> 40%) of InGaN QWs. , These excited electrons, particularly those in the topmost QW, can reach the Au surface either by overcoming the Schottky barrier or by tunneling through the 2-nm-thin GaN cap layer. Because the extent of band tilting is determined by the internal electric fields in QWs, the band engineering (i.e., varying the thickness, bandgap, doping, and so forth.)…”

Section: Resultsmentioning

confidence: 99%

Nanostructured InGaN Quantum Wells as a Surface-Enhanced Raman Scattering Substrate with Expanded Hot Spots

Chien

Zhang

Chen

et al. 2021

ACS Appl. Nano Mater.

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Surface-enhanced Raman scattering (SERS) is a technique that can deliver label-free, real-time, and multiplex detection of target molecules. However, the development of this potential tool has been impeded by an obstacle: reliability. Because SERS detection relies on the very localized (< 10 nm) hot spot, severe intensity fluctuation occurs as the molecule thermally diffuses in and out of the tiny spot, making it difficult to quantify the information of analytes. Here, we address the problem by greatly expanding the effective area of a hot spot. The breakthrough is realized by a few layers of conformally nanostructured InGaN, which introduce wafer-scale charge coupling at the molecule/metal/semiconductor interface. These additional coupling channels interconnect plasmonic nanojunctions, rendering the SERS-active surface spreading over 1200 μm2 in Raman mapping. The result allows us to capture trace molecules with increased chances and stabilized signals, paving a way for SERS to enter real-life applications.

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Section: Resultsmentioning

confidence: 99%

Nanostructured InGaN Quantum Wells as a Surface-Enhanced Raman Scattering Substrate with Expanded Hot Spots

Chien

Zhang

Chen

et al. 2021

ACS Appl. Nano Mater.

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“…This was attributed to an intensified number of nonradiative recombination due to the contribution edge dislocations as a result of the high temperature. The performance of InGaN/GaN MQW solar cells focusing on the N-polar orientation was studied by Belghouthi et al, which also revealed that an increase in temperature significantly reduced the solar cell efficiency of MQW solar cells. Hence, the above reports − confirm the detrimental effect that high temperatures have on the performance of InGaN/GaN MQW solar cells.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Photoconversion Efficiency in InGaN/GaN MQW Solar Cells at High Temperatures

Shan

et al. 2023

ACS Appl. Energy Mater.

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The photoelectric conversion efficiency of InGaN/ GaN multiple quantum well (MQW) solar cells has been investigated at high temperatures and the study revealed that their average value decreased from about 2.58% at room temperature to about 2.39% at a temperature of 500 °C. Atomic force microscopy (AFM) analysis indicated that the hightemperature treatment made the surface roughness of the material larger, and the crystal quality deteriorated. X-ray diffraction analysis showed that the full width at half-maximum (FWHM) value of the rocking curve and the degree of relaxation in the InGaN sample increased, indicating that the crystal quality in the active region had deteriorated. Photoluminescence (PL) spectroscopic measurements confirmed that the peak intensity decreased, and a red shift in the peak was observed in the PL spectrum. Moreover, scanning transmission electron microscopy (STEM) revealed an uneven distribution of indium components in the quantum well region after high-temperature treatment and that lattice distortion had taken place. Additionally, first-principles calculations were carried out, which also confirmed that the atomic movement led to a reduction in the band gap and to the red shift in the peak wavelength. The results of this study provided clear evidence that fluctuations of the indium components took place in the quantum well region under a high-temperature treatment at 500 °C, accompanied by lattice distortion. This led to an increase in the number of nonradiative recombination centers, which consequently led to the degradation of the photoelectric conversion efficiency in the fabricated InGaN/GaN MQW solar cells.

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“…Other than poor crystalline quality and the detrimental effect of polarization charges, an effect link to the non-uniform temperature distribution also exists in the final photovoltaic cell which may explain the difference between the experimental results and what was theoretically expected. This effect of the temperature on the solar cell performance has been investigated by many authors [10][11][12][13]. In these numerical works the temperature is treated as a parameter.…”

Section: Introductionmentioning

confidence: 99%

COMSOL Simulation of Heat Distribution in InGaN Solar Cells: Coupled Optical-Electrical-Thermal 3-D Analysis

Ammar

Belghouthi²,

Aoun

et al. 2022

DDF

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Thermal distribution in solar cells has been rarely investigated despite it significant impact on the performance. The current contribution presents a COMSOL Multiphysics 3-D analysis of the electrical and optical photogeneration properties in relation with the heat distribution in InGaN solar cell. For this simulation, we have coupled the “Semiconductor Module”, the “Heat Transfer Module for Solids,” and the “Wave Optics Module” allowing us to calculate the Shockley–Read–Hall heating, the total heat flux, the Joule heating the carrier’s concentration, the electric field, and the temperature dissipation in the InGaN solar cell structure. Despite the fact that the achievements of InGaN solar cells are still mostly at the state of laboratory studies, the current contribution presenting original results on coupled phenomena occurring in the cells makes it possible to highlight new possible guidelines for an improve of their efficiency.

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Temperature Dependence of InGaN / GaN Multiple Quantum Well Solar Cells

Cited by 11 publications

References 13 publications

Nanostructured InGaN Quantum Wells as a Surface-Enhanced Raman Scattering Substrate with Expanded Hot Spots

Nanostructured InGaN Quantum Wells as a Surface-Enhanced Raman Scattering Substrate with Expanded Hot Spots

Evaluation of Photoconversion Efficiency in InGaN/GaN MQW Solar Cells at High Temperatures

COMSOL Simulation of Heat Distribution in InGaN Solar Cells: Coupled Optical-Electrical-Thermal 3-D Analysis

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