Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

Generic high‐frequency small‐signal look‐up table model extraction for Si–Ge heterojunction bipolar transistors

“…However, because the parameter extractions are performed under relatively high-injection levels, this translates into somewhat overdetermination of the values. This is because as the injection level increases, R bei and R ee are also increased because of self-heating [12]. ¶ On the basis of our observation, emitter resistance R ee (or R E in the DC context) can greatly influence § V je is the emitter junction built-in voltage, m e is the grading coefficient of the emitter junction, and C be0 is the base-emitter p-n junction capacitance at V BE = 0 V. Similar definitions and symbols are used for the collector junction.…”

Electrothermal Effects on Performance of GaAs HBT Power Amplifier During Power Versus Time (PVT) Variation at GSM/DCS Bands

“…Furthermore, for the Q3 bias diode reference, the temperature difference between the first and second slots is about 15 C. The reference diode temperature is relatively lower than that of the power cell. The reference diode bias network is cooled down at a faster rate, and it raises the base voltage on the emitter follower, which, in turn, increases the base voltage and current of the Q3 power cell at the beginning of the second slot, as shown in (3). Under such circumstances, the AM-loop in the CMOS controller experiences high current, and hence, it forces to decrease .…”

“…Therefore, in the past decade, many studies have been performed for characterizing RF performance of different GaAs HBTs, where electrothermal effects are examined in both theoretical and experimental ways. Among these, it should be mentioned that temperature effects on direct current (dc) and small-signal behavior of an InGaP/GaAs HBT have been investigated in [3], short-term dc-current gain variation in a AlGaAs/GaAs HBT with high current density-low temperature stress applied has been examined in [4], and effects of structure layout on its thermal management of a GaAs integrated circuit (IC) have been studied in [5]. Further, thermal performance of a collector-up GaAs HBT with a novel thermal via structure underneath its fingers has been evaluated in [6], temperature-dependent current gains and offset voltages of both AlGaAs/ GaAs and InGaP/GaAs HBTs have been studied in [7], and the dynamic thermal analysis of a GaAs HBT in the frequency domain has been performed in [8].…”

Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates

“…The material is of interest for a variety of device applications such as light emitting diodes [1], semiconductor lasers [2,3], heterojunction bipolar transistors (HBTs) [4,5], and high efficiency tandem solar cells [6]. Ga 0.52 In 0.48 P/GaAs structures have significant advantages over AlGaAs/GaAs structures in larger valence-band discontinuity, better etch selectivity, and less oxidation effect.…”