Temperature dependence of low-frequency excess noise in junction-gate FET's

Haslett, J.W.; Kendall, E.J.M.

doi:10.1109/t-ed.1972.17523

Cited by 47 publications

(16 citation statements)

References 10 publications

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“…Noise performance at low frequency of Si-JFETs at cryogenic temperature is strongly dependent on temperature [9,10]. Our set-up is not an exception to this and Fig.…”

Section: Measurements Resultsmentioning

confidence: 56%

The Readout and Biasing System for the MARE Experiment in Milan

et al. 2011

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The complete readout and biasing system for the MARE experiment in Milan is presented. The experiment aims at a direct measurement of the neutrino mass, and is based on an array of microcalorimeters coupled to semiconductor thermistors. The readout is based on JFETs operated inside the cryostat at cold (130 K), to buffer the voltage signal from the thermistors. The sources of the JFETs are fed into second stage amplifiers with very low noise (less than 0.5 nV/ √ Hz white noise) and programmable high gain. The outputs are then processed by Bessel filters and acquired with a commercial DAQ system. Every 20 channels, an additional group of 4 is used to amplify the ground reference from inside the cryostat; this common ground signal is then subtracted from each channel. This approach allows to recover a fully differential readout with a smaller number of cables with respect to the standard differential configuration. The detector bias is programmable in voltage and sign with 8-bit resolution. A test signal can be superimposed on the bias voltage, in order to test each channel individually. All the readout system is remotely programmable from a PC, coupled through optical fibers.

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“…Noise performance at low frequency of Si-JFETs at cryogenic temperature is strongly dependent on temperature [9,10]. Our set-up is not an exception to this and Fig.…”

Section: Measurements Resultsmentioning

confidence: 56%

The Readout and Biasing System for the MARE Experiment in Milan

et al. 2011

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“…The rms flicker noise current in the frequency band Af is given by (7) where I is the dc current, n N 1, K f is the flickernoise coefficient, and m is the flicker-noise exponent. In modeling J E T noise at low temperatures, n is not fixed [7]. In modeling base-current flicker noise in the BJT, m is typically in the range 1 < m < 3 [ti].…”

Section: Flicker Noisementioning

confidence: 99%

Fundamentals of low-noise analog circuit design

Leach

1994

Proc. IEEE

116

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This paper presents a tutorial treatment of the fundamentals of noise in solid-state analog electronic circuits. It is written for upper division students andpracticing engineers who wish to gain a basic knowledge of the theory of electronic noise and techniques for low-noise circuit design. The paper presents an overview of noise fundamentals, a description of noise models for passive devices and active solid-state devices, methods of calculating the noise performance of ampl$ers, and techniques for minimizing noise in circuit design. The theory and methods are applicable to both discrete and integrated circuits.

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“…The experimental (1) In this expression i is the signal current, R F and R are the feedback resistor and detector resistance values, i and e, are the rms crrent and voltage noises at the FET gate. Z is the AC impedance oT the detector at its operating frequency, which is about 10 Hz for reasons discussed later.…”

Section: Theoretical Noise Expressionmentioning

confidence: 99%