Temperature dependence of switching performance in IGBT circuits and its compact modeling

Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

“…[7][8][9] However, they are not comprehensive physical models valid for practical circuit designs. HiSIM-IGBT has been developed for simulating circuit performance, 10,11) which solves the potential distribution within IGBT explicitly under fully dynamic load conditions, through the surface-potential-based modeling approach including the advanced MOSFET model HiSIM. [12][13][14][15] However, it considers the symmetrical trench-type IGBT structure [see Fig.…”

Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects

“…Here, accurate compact modeling of this phenomenon for the simulation program with integrated circuit emphasis (SPICE) simulation is inevitable to enable circuit design of more and more efficient power electronic circuits. [3][4][5] Lumped-charge modeling technique is often used in the reverse recovery modeling. 6,7) This approach is simple and easy to be implemented into circuit simulators or even into macro models, while it is not physically accurate.…”