Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

Trupke, Thorsten; Green, Martin A.; Würfel, P.; Altermatt, Pietro P.; Wang, A.; Zhao, Jianhua; Corkish, Richard

doi:10.1063/1.1610231

Cited by 271 publications

(180 citation statements)

References 28 publications

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“…19. The PL photons are emitted isotropically in all directions, but for co-planar polished samples like the ones used in this work only a very narrow range of angles will be able to escape the sample and reach the detector.…”

Section: A Effect Of Increased Rear Reflectancementioning

confidence: 99%

Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method

Haug

Olibet

Nordseth

et al. 2013

Journal of Applied Physics

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In this paper we study the surface passivation properties of thermally oxidized silicon wafers with controlled surface band bending, using a new characterization technique combining calibrated photoluminescence imaging with the application of an external voltage over the rear side passivation layer. Various aspects of the technique and possible errors in the determination of the effective surface recombination velocity are discussed, including lateral carrier diffusion, leakage currents and optical effects related to the presence of metal electrodes on the investigated samples.In order to quantitatively describe the recombination activity at the SiO 2 /c-Si interface and the effect of fixed charges in the oxide layer the measured effective carrier lifetime vs. voltage curves have been analyzed in the framework of an extended Shockley-Read Hall recombination model. Furthermore, the results have been compared with corresponding results from microwave detected photoconductance decay measurements after depositing corona charges. We find an excellent agreement between the two techniques and between complementary measurements of the oxide charge density. Photoluminescence imaging under applied bias gives fast and repeatable measurements and allows for simultaneous data collection from multiple areas on the sample, and has thus been proven to be powerful tool for quantitative characterization of surface passivation layers.

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Section: A Effect Of Increased Rear Reflectancementioning

confidence: 99%

Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method

Haug

Olibet

Nordseth

et al. 2013

Journal of Applied Physics

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show abstract

“…These are the charge carrier densities relevant for device operation in sunlight. As B is fairly constant below this charge carrier density, we can use Equation (7) to derive a lifetime of order [35][36][37] 130-1300 267 CdTe [38][39][40] 100-5100 195 Si 41,42 0.001-0.01…”

Section: -4mentioning

confidence: 99%

Research Update: Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells

et al. 2016

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The hybrid perovskite CH 3 NH 3 PbI 3 (MAPI) exhibits long minority-carrier lifetimes and diffusion lengths. We show that slow recombination originates from a spin-split indirect-gap. Large internal electric fields act on spin-orbit-coupled band extrema, shifting band-edges to inequivalent wavevectors, making the fundamental gap indirect. From a description of photoluminescence within the quasiparticle self-consistent GW approximation for MAPI, CdTe and GaAs, we predict carrier lifetime as a function of light intensity and temperature. At operating conditions we find radiative recombination in MAPI is reduced by a factor of more than 350 compared to direct gap behavior. The indirect gap is retained with dynamic disorder.

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“…Bulk Shockley Read Hall (SRH) recombination is ignored here as the high quality wafers used for SHJ solar cells have defect densities that have a negligible effect on the τ eff . The equation for τ bulk as a function of excess carrier concentration (∆n) is: (6) In Equation 4, B low is the radiative recombination coefficient as measured by Trupke 15 for lightly doped silicon and B rel is the relative radiative recombination coefficient determined by Altermatt. 14 The product of these two coefficients account for the radiative recombination component of bulk crystalline silicon.…”

Section: A Bulk Recombination Modelmentioning

confidence: 99%

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

et al. 2016

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This work adapts a model to simulate the carrier injection dependent minority carrier lifetime of crystalline silicon passivated with hydrogenated amorphous silicon at elevated temperatures. Two existing models that respectively calculate the bulk lifetime and surface recombination velocity are used and the full temperature dependency of these models are explored. After a thorough description of these temperature dependencies, experimental results using this model show that the minority carrier lifetime changes upon annealing of silicon heterojunction structures are not universal. Furthermore, comparisons of the temperature dependent model to using the room temperature model at elevated temperatures is given and significant differences are observed when using temperatures above 100 °C. This shows the necessity of taking temperature effects into account during in-situ annealing experiments.

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Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

Cited by 271 publications

References 28 publications

Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method

Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method

Research Update: Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

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