2002
DOI: 10.1016/s0304-8853(01)00768-5
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Temperature dependence of the tunneling magnetoresistance for tunnel junctions

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Cited by 10 publications
(6 citation statements)
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“…AMR first increases with the decrease of temperature and reaches a maximum at 150-160K. Similar results have been reported previously [34].…”
Section: Resultssupporting
confidence: 91%
“…AMR first increases with the decrease of temperature and reaches a maximum at 150-160K. Similar results have been reported previously [34].…”
Section: Resultssupporting
confidence: 91%
“…The TMR between the emitter and base was about 22% at room temperature, which is similar to the value of a typical MTJ with a single barrier before annealing [8]. The TMR between the collector and base was about 12%.…”
Section: Resultssupporting
confidence: 78%
“…Yao, et al and Lee, et al reported the increase of annealing temperature increases the TMR ratio, but lower measurement temperatures increase it. 16,60 Moreover, TMR is dependent on the interface temperature. 60 Temperature (T) causes the complete disorder of the tunneling barriers according to Eq.…”
Section: Tmr Overviewmentioning
confidence: 99%