Temperature-dependent barrier characteristics of swift heavy ion irradiated Au∕n-Si Schottky structure

Abstract

Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

“…Any mechanism that modifies the properties of the interface such as the introduction of an interfacial layer [1][2][3][4], annealing [5,6], irradiation with gamma rays [7,8], protons [9][10][11][12][13][14] and neutrons [14][15][16], ion implantation, [17][18][19] and high-energy ion beam irradiation [20][21][22][23][24][25][26] are found to alter the characteristics of the barrier. The Schottky barrier height (SBH) forms a very important parameter of the diode as it controls the electrical transport across the barrier.…”

“…The Schottky barrier height (SBH) forms a very important parameter of the diode as it controls the electrical transport across the barrier. Some analyses have been reported on the studies of high-energy ion beam modification of M-S interfaces [22][23][24][25][26]. However, the deeper understanding of the basic nature of such interactions still remains incomplete.…”

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

“…Hence a significant change is observed in the CV characteristics. However, at higher irradiation fluence, the electronic energy loss would be high enough to produce 'annealing effect' along with defect creation [12,19]. This causes partial annealing of the defects created and henceforth shows slight variation in the CV data beyond 5 Â 10 12 ions/cm 2 fluence.…”

Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature

“…6. The deviation in the experimental ln(I 0 /T 2 ) versus 1/kT curve at low temperatures can be explained by the temperature depended of the BH and ideality factor due to the presence of the spatially inhomogeneous BH and potential [1,[21][22][23][24][25][26][27][28][29][30][31][32][33][34]. The current through the diode flows preferentially through the lower barriers in the potential distribution.…”