Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

Abstract

We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient decreases from ∼8×10−29 cm6/s at 100 K to ∼4×10−29 cm6/s at 300 K. This behavior, which is different from results in other higher-dimensional systems, is explained in terms of the temperature dependence of electron-hole scattering in the dots and contribution from higher lying states in the dot and adjoining layers.

Semiconductor Quantum‐Dot Saturable Absorber Mirrors for Mode‐Locking Solid‐State Lasers

“…Stranski-Krastanov growth of 3D InAs islands on GaAs is preceded by the growth of a thin wetting layer (about 1.7 monolayer) [91,92], which subsequently provides a reservoir of 2D quantized continuum of states strongly interacting with the discrete states in QD [114]. Several relaxation mechanisms have been proposed as possible explanation for the observed fast relaxation in InGaAs/GaAs QD assemblies, including Auger scattering involving the wetting layer continuum of states [110,115,116], phononassisted resonant tunneling via native GaAs defect states [117], and electron-hole scattering where the hole subsystem relaxes on a subpicosecond scale because of interaction with phonons and relatively small separation of the hole energy levels [118,119].…”

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

“…A multiexponential fast decay (a few hundreds of ps) is first observed, which reveals the influence of non-radiative Auger processes in the dots. 21 After about 500 ps, a mono-exponential decay is restored, still much shorter than for nitrogen-free QDs. Decay times of 700 ps, 1 ns, and 1.3 ns are extracted for LET, LE, and HE transitions, respectively.…”

Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers

“…27,28 Auger recombination rate in QDs decreases with temperature, as suggested by recent temperature-dependent large signal modulation experiments made on In 0.4 Ga 0.6 As/GaAs QD lasers. 29 This is a direct consequence of electron-hole scattering in quantum dots. 29 With pdoping, the hole population in QDs increases, leading to an increase in the rate of Auger recombination at relatively low temperature.…”

“…29 This is a direct consequence of electron-hole scattering in quantum dots. 29 With pdoping, the hole population in QDs increases, leading to an increase in the rate of Auger recombination at relatively low temperature. At elevated temperatures, the holes in quantum dots are thermally excited to higher valence band states and a larger decrease of Auger recombination occurs, resulting in a component of the threshold current in a QD laser that decreases with temperature.…”