The
controlled synthesis and modification of the composition of
layered compounds are essential prerequisites for their deployment
in electronic or chemical applications. Pt-chalcogenides exhibit various
compositional phases. Here, we investigate how Pt-selenide and Pt-telluride
phases can be obtained as ultrathin films or as supported nanocrystals
by physical vapor deposition and thermal treatment. The films are
characterized by scanning tunneling microscopy and spectroscopy, scanning
transmission electron microscopy, and photoemission and Raman spectroscopy.
In all cases, Pt-dichalcogenides are obtained by Pt and chalcogen
codeposition at growth temperatures below 300 °C. These films
can be grown by van der Waals epitaxy in a layer-by-layer fashion,
enabling the characterization of the pronounced layer-dependent electronic
properties of these compounds. Pt-telluride growth at elevated temperatures
(above 400 °C) results in the formation of Pt-monotelluride.
Interestingly, the thin film Pt-dichalcogenides can also be transformed
into different phases with lower chalcogen concentration by post-growth
vacuum annealing. Annealing-induced loss of chalcogen results in new
composites. With this thermal process, an intermittent layered compound
of Pt3Te4 is synthesized, which consists of
alternating PtTe2 and PtTe van der Waals layers. By thermal
treatment of PtSe2, we obtain a non-layered Pt-monoselenide
in nanocrystalline form. PtSe is not reported in the bulk Pt-Se phase
diagram, but its structure is analogue to the known Pt-monosulfide
with a tetragonal unit cell. This PtSe phase is semiconducting with
a band gap of ∼0.9 eV. The nanocrystalline PtSe phase is, however,
unstable and easily loses more Se and eventually converts into Pt.
Thus, it is demonstrated that post-growth thermally induced transformation
of Pt-dichalcogenides films enables the synthesis of new Pt-chalcogenide
phases as ultrathin films or nanocrystals.