Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure

Analysis of Different Configurations of Si1-xGex for Double-Gate MOSFETs and Its Future Applications

“…The different configurations of Si 1-x Ge x utilized by researchers so far provide a balance between electron mobility and hole mobility of Ge are summarized in Table 2. Thermoelectric Applications Schottky Barrier [17] Leakage Current Improving Applications SiGe Shell [18] Ultrathin P-FinFET Applications Sub 100 nm Tunnel FET [19] DRAM Applications Heterojunction Tunnel Model [20] Optimize Tunnel Logic Inverter Applications Negative Capacitance [21] Tradeoffs in Energy Delay Low Power Switching Applications Heterogeneous Tunnel Dielectric [22] Device Reliability Applications Gate Surrounding Channel [23] 6-Transistor SRAM Cell Applications Vertical Slit [24] 3-DM Integration Applications Fully Depleted SOI [25] Radio Frequency Applications SiGe [26] Enhancing Speed and High-Volume Optical Interconnect Applications Si 0.6 Ge 0.4 [27] Step-FinFET and Inverter Applications Gate All-Around [28] SCE Improvement Applications Double-Gate [29] High Pass Filter Applications Double-Gate [30] Core Insulator Applications Double-Gate [31] Fully Depleted SOI Applications Dual-Gate [32] Source Follower Applications Memristor [33] Reducing Power Consumption and Increasing IC Performance Applications.…”

Characterization of Short-Channel MOSFETs and TFETs at Cryogenic Temperatures

“…Cryo-MOSFETs reduce the overshoot interconnected with initialization, manipulation, data handling, fan in /out of devices and circuits. The power handling and consumption of semiconductor devices are limited at cryogenic temperature [2], however device keen to control and timing of signal. Application for low temperature device are found in many engineering elds such as space science, army related equipments, transportation and many more elds where low noise requirements needed [3].…”