Temperature-dependent Raman scattering in round pit of 4H–SiC

Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions

“…Therefore, it is important to acquire details of the temperature dependence of the basic material properties, and better understanding of these properties can be helpful to improve the material and device quality. Han et al studied the temperature dependence of Raman scattering in round pit of bulk 4H-SiC [11] and bulk 4H-SiC with hexagonal defects. [12] Sun et al investigated temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentrations.…”