2016
DOI: 10.1063/1.4965298
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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Abstract: We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting the quantum efficiency of such devices. In the green spectral range, the efficiency deteriorates, which we assign to a combination of diminishing electronhole wave function overlap and enhanced Auger processes, while a significant reduction in material quality wit… Show more

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Cited by 90 publications
(87 citation statements)
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“…This result is in qualitative agreement with the recently observed anomalous (ascending) temperature variation of the radiative recombination coefficient [23], which was attributed to strong hole localiza-361 tion by composition fluctuations in InGaN alloys. At that, the Auger recombination coefficients were 362 found in [23] to increase with temperature in both blue and green LEDs.…”
supporting
confidence: 89%
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“…This result is in qualitative agreement with the recently observed anomalous (ascending) temperature variation of the radiative recombination coefficient [23], which was attributed to strong hole localiza-361 tion by composition fluctuations in InGaN alloys. At that, the Auger recombination coefficients were 362 found in [23] to increase with temperature in both blue and green LEDs.…”
supporting
confidence: 89%
“…[20,21]. Recently, implication of composition fluctuations in InGaN to the LED effi-324 ciency reduction in the "green gap" has been also demonstrated [22,23,24]. products of both sw-and lw-emission peaks are found to be nearly independent of temperature, similar to the case of blue LED [5].…”
mentioning
confidence: 80%
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“…Наибольшие успехи по реализации по-тенциальных возможностей этих материалов достигнуты в создании высокоэффективных синих светодиодов на ос-нове квантово-размерных структур InGaN/GaN на длину волны излучения 450−460 нм [1]. Подобный успех пока не удается реализовать для светоизлучающих приборов в зеленой и ультрафиолетовой областях спектра [2]. Эти светодиоды в несколько раз уступают синим светодио-дам по эффективности и сроку службы [2,3].…”
Section: Introductionunclassified
“…Подобный успех пока не удается реализовать для светоизлучающих приборов в зеленой и ультрафиолетовой областях спектра [2]. Эти светодиоды в несколько раз уступают синим светодио-дам по эффективности и сроку службы [2,3].…”
Section: Introductionunclassified