Temperature effects on the bulk discharge current of dielectric films of MEMS capacitive switches

Koutsoureli, M.; Michalas, Loukas; Papaioannou, G.

doi:10.1016/j.microrel.2012.06.005

Cited by 10 publications

(4 citation statements)

References 37 publications

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“…3b). These charging processes include the effect of charge trapping, hopping [18] and percolation and they will lead to a macroscopic behavior that obeys the stretched exponential law [14,15] with time constants of 48 s and 1005 s for the contacted and contactless charging respectively. The low value of charging time can be attributed to the large applied electric field and mainly to the short observation time window.…”

Section: Resultsmentioning

confidence: 99%

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Properties of contactless and contacted charging in MEMS capacitive switches

Koutsoureli

Michalas

Martins

et al. 2013

Microelectronics Reliability

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The dielectric charging in MEMS capacitive switches is a complex effect. The high electric field during pull-down causes intrinsic free charge migration and dipole orientation as well as charge injection. The macroscopic dipole moment of the first two mechanisms is opposite to the one arising from charge injection. This causes partial compensation hence mitigates the overall charging and increases the device lifetime. The charging due to intrinsic free charge migration and dipole orientation can be monitored under contactless electric field application in the pull-up state. The paper investigates the characteristics of contactless charging and compares them with the ones of contacted charging. The characteristics of the discharging process that follows each charging procedure are also presented

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Section: Resultsmentioning

confidence: 99%

“…The bulk discharge current transient in a MEMS capacitive switch is determined using the device model proposed in [14,15], which includes a fixed non-flat metal plate of area A covered with a dielectric film of uniform thickness d e and dielectric constant e r .…”

Section: Kelvin Probe Methods In Memsmentioning

confidence: 99%

Properties of contactless and contacted charging in MEMS capacitive switches

Koutsoureli

Michalas

Martins

et al. 2013

Microelectronics Reliability

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“…The dielectric charging was strongly affected by temperature and increased exponentially with temperature, especially with high temperature [ 70 ]. The increase of charging temperature assists the charge trapping and the increase of discharging temperature leads to an increase in the magnitude of the bulk discharge current [ 71 ]. Zhen et al [ 72 ] studied the impact of humidity on dielectric charging in RF MEMS capacitive switches and found that bulk charging dominated in dry air, but surface charging increased linearly with increasing humidity.…”

Section: The Research Status Of Mems Switches In Different Frequenmentioning

confidence: 99%

Research and Analysis of MEMS Switches in Different Frequency Bands

Tian

Yuan

2018

Micromachines

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Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1) utilizing combinations of several switches in series; (2) covering a float metal layer on the dielectric layer; (3) using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4) developing MEMS switches using T-match and π-match; (5) designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS) technology and reconfigurable MEMS’ surfaces; (6) employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7) selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8) adopting gold alloying with carbon nanotubes (CNTs), hermetic and reliable packaging, and mN-level contact.

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“… 10 6 V/cm) and trapped in defects, characterized by long trapping time constants [5]- [7]. The trapped charge gives rise to shift of pull-in and pull-out voltages and finally to device failure due to stiction [4], [8]. Another charging mechanism is the induced charging that under certain conditions that can be large enough to give rise to compensation [9], [10].…”

Section: Introductionmentioning

confidence: 99%