MIM capacitors are considered equally important devices for the assessment of
dielectric charging in RF MEMS capacitive switches. Beside the obvious
similarities between the down state condition of RF MEMS and MIM capacitors
there are also some important differences. The paper aims to introduce a
novel approach to the study of dielectric charging in MEMS with the aid of
MIM capacitors by combining experimental results obtained by the application
of DC, Charging Transient and Kelvin Probe techniques. The strengths and
weaknesses are discussed in conjunction with experimental results obtained on
SiNx based MIM capacitors and MEMS capacitive switches fabricated under the
same conditions.