A MIM capacitor study of dielectric charging for RF MEMS capacitive switches

Abstract

MIM capacitors are considered equally important devices for the assessment of dielectric charging in RF MEMS capacitive switches. Beside the obvious similarities between the down state condition of RF MEMS and MIM capacitors there are also some important differences. The paper aims to introduce a novel approach to the study of dielectric charging in MEMS with the aid of MIM capacitors by combining experimental results obtained by the application of DC, Charging Transient and Kelvin Probe techniques. The strengths and weaknesses are discussed in conjunction with experimental results obtained on SiNx based MIM capacitors and MEMS capacitive switches fabricated under the same conditions.

Consideration of conduction mechanisms in high-k dielectric stacks as a tool to study electrically active defects

“…The J(V) dependence (Fig. 26) at low voltages are linear, indicating Ohmic behavior, suggesting hopping conduction [69]. At applied |V| > 0.5 V the current becomes proportional to V 2 characteristic of space charge limited current.…”

Hybrid neural lumped element approach in inverse modeling of RF MEMS switches

“…MEMS devices have the ability to sense, control and actuate on micro scale, and generate effects on macro scale. According to variety and diversity of RF MEMS technology functionalities, they have wide applicability for the new generation of communication system components, like switches and varactors (variable capacitors), resonators, complex networks, reconfigurable filters, phase shifters, impedance matching tuners and programmable step attenuators [1][2][3][4][5][6][7][8][9]. In the recent time, the RF MEMS technology has found applications for Internet of Things (IoT), Internet of Everything (IoE), Tactile Internet and 5G telecommunications [10][11][12].…”