Induced charging phenomena on SiNx dielectric films used in RF MEMS capacitive switches

Koutsoureli, M.; Michalas, Loukas; Papandreou, E.; Papaioannou, G.

doi:10.1016/j.microrel.2015.06.007

Cited by 10 publications

(2 citation statements)

References 24 publications

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“…Polarization and migration will occur in both models. Besides, in the contact model, the dielectric layers and the electrodes are adhesive to each other, while ion injection is another charging mechanism [14][15][16][17][18] . All of these three charge movements can interrupt the internal balance of the electric field and form an extra electrostatic force on the MEMS devices.…”

Section: Frequency Driftmentioning

confidence: 99%

The effect of parasitic charge on the output stability of MEMS gyroscopes

Liu¹,

Su²,

Tong³

et al. 2018

J. Semicond.

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Output voltage drifting was observed in MEMS gyroscopes. Other than the quadrature error, frequency mismatch and quality factor, the dielectric parasitic charge was thought to be a major determinant. We studied the mechanism and variation of the parasitic charge in the MEMS gyroscopes, and analyzed the effect of the parasitic charge on the output stability. This phenomenon was extremely obvious in the Pyrex encapsulated MEMS gyroscopes. Due to the DC voltage required for the electrostatic actuation, the parasitic charge in the dielectric layer would accumulate and induce a residual voltage. This voltage had an impact on the resonant frequency of the gyroscopes, so as to affect the output stability. The theoretical studies were also confirmed by our experimental results. It was shown that the parasitic charge was harmful to the output stability of MEMS gyroscopes.

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Section: Frequency Driftmentioning

confidence: 99%

The effect of parasitic charge on the output stability of MEMS gyroscopes

Liu¹,

Su²,

Tong³

et al. 2018

J. Semicond.

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show abstract

“…Such a long-time drift observed in experiments might result from the dielectric charging of dielectric materials in the micro-accelerometer, because the charging effects of dielectrics, such as oxide silicon, nitride silicon, and glass involved a slow process of charge movement and took a long time to finish. The dielectric charging usually involved ion injection and internal polarization of insulation material which was used for electrical isolation or structural substrate [ 5 , 6 , 7 , 8 , 9 ], and both dielectrics and DC electrical field simultaneously existing was the necessary condition of dielectric charging [ 10 , 11 ]. In our studied accelerometers, the DC voltage was applied for generating feedback electrostatic forces and the dielectric materials included the glass substrate and potential oxidation layer on the sensing silicon electrodes.…”

Section: Introductionmentioning

confidence: 99%

Glass Polarization Induced Drift of a Closed-Loop Micro-Accelerometer

Zhou

et al. 2018

Materials

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The glass polarization effects were introduced in this paper to study the main cause of turn-on drift phenomenon of closed-loop micro-accelerometers. The glass substrate underneath the sensitive silicon structure underwent a polarizing process when the DC bias voltage was applied. The slow polarizing process induced an additional electrostatic field to continually drag the movable mass block from one position to another so that the sensing capacitance was changed, which led to an output drift of micro-accelerometers. This drift was indirectly tested by experiments and could be sharply reduced by a shielding layer deposited on the glass substrate because the extra electrical filed was prohibited from generating extra electrostatic forces on the movable fingers of the mass block. The experimental results indicate the average magnitude of drift decreased about 73%, from 3.69 to 0.99 mV. The conclusions proposed in this paper showed a meaningful guideline to improve the stability of micro-devices based on silicon-on-glass structures.

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Design and fabrication of a 4-bit RF MEMS attenuator with a high attenuation accuracy

Zhang

Zhao

et al. 2020

Analog Integr Circ Sig Process

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Induced charging phenomena on SiNx dielectric films used in RF MEMS capacitive switches

Cited by 10 publications

References 24 publications

The effect of parasitic charge on the output stability of MEMS gyroscopes

The effect of parasitic charge on the output stability of MEMS gyroscopes

Glass Polarization Induced Drift of a Closed-Loop Micro-Accelerometer

Design and fabrication of a 4-bit RF MEMS attenuator with a high attenuation accuracy

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