Doping is an effective strategy to
modulate the dielectric
behaviors
of microwave absorption (MA) materials, for which the complex permittivity
can be manipulated by encoding defect genes in the contracted crystal,
while it is seldom illustrated in the magnetic ferrite crystal. Herein,
the impact of defect genes on enhancing dielectric polarization in
contracted Ba1–2x
La
x
Sm
x
Fe12O19 (LaSm-x) crystals has been investigated
by lanthanum–samarium codoping BaFe12O19. It can be found that the MA character can be expressed via dielectric
polarization instructed by defect genes, and their encoded amount
can be guided through doping of various contents. Profiting from these
enhanced point defects, enriched oxygen vacancies, and improved vacancies
on the grain boundary, the intensified defect-induced polarization
causes the highest dielectric loss angular tangent above 0.5 at most
testing bands in LaSm-4 (the largest shrinkage factor of 4.57%). Accordingly,
LaSm-4 is awarded for its optimized MA performance, embracing a minimum
reflection loss of −62.8 dB and an effective absorption bandwidth
of 5.64 GHz at 2.1 mm (12.05–17.69 GHz). This work clarifies
the instructive impact of defect genes encoded in ferrites on enhancing
polarization loss, providing a promising strategy to strengthen dielectric
loss ability in other magnetic materials.