Temperature measurements of GaN FETs by means of average gate current sensing

Roschatt, Philipp Marc; McMahon, R.A.; Pickering, Stephen

doi:10.1109/peds.2015.7203469

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…However, few details have been provided on the evaluation of thermal resistance using these quantities. Furthermore, sensing the conduction resistance is problematic because the overall conduction resistance is the sum of the junction resistances and the bond wires and solder joints [39]. An interesting approach based on using the gate current or the drainsource voltage as a TSEP is reported in [21].…”

Section: Estimation Of the Junction Temperature And Thermal Resistanc...mentioning

confidence: 99%

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

et al. 2023

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The thermal management of power converters is not only crucial for their own optimal operation and reliability, but also for the overall system in which they are operating. Reliability is a very serious aspect because power electronics systems are being increasingly widely adopted in mission-critical applications in the e-mobility sector, in smart grids, and other applications where safety and operational continuity are essential. The current trend towards miniaturization of power conversion systems and, consequently, towards high power density solutions is speeding up the diffusion of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). GaN HEMT-based high power density converters must be properly managed, making the estimation of the thermal characteristics of these devices essential. This paper proposes the use of some Thermo-Sensitive Electrical Parameters (TSEP) for a simple and effective thermal resistance evaluation. The primary advantages and limitations of these TSEPs have been critically analyzed. The analysis highlighted that the use of the gate-source voltage is the best approach. However, it requires direct access to the gate pin, which may not be available externally in some system-in-package solutions.

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Section: Estimation Of the Junction Temperature And Thermal Resistanc...mentioning

confidence: 99%

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

et al. 2023

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“…Indirect temperature indicators could eliminate the need to understand the thermal path, relying instead on knowledge of how device behavior changes with temperature, which, again, may change as devices age. Usually referred to as temperature-sensitive electrical parameters (TSEPs), these temperature indicators include gate threshold voltage [8], quasi-threshold voltage [9], internal gate resistance [8], ON-state resistance [8], bias temperature instability [10], drain current gradient [11], [12], and gate current leakage [13]. This literature generally quantifies the linearity This work is licensed under a Creative Commons Attribution 4.0 License.…”

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confidence: 99%

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Hedayati

Wang

Dymond

et al. 2021

IEEE Trans. Power Electron.

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Power semiconductor devices have maximum junction temperature limits, but it is not straightforward to sense or infer temperature inside sealed devices in running converters. One method is to observe electrical behavior that is known to be temperature dependent. For example, in some gallium nitride (GaN) power semiconductor devices, the maximum slope of the device current at turn-ON has been shown to reduce as the junction temperature increases. This article demonstrates the first noncontact overtemperature protection circuit for GaN power devices that exploits this effect and overcomes the complication that this inverse proportionality is affected by load current. A variant of a previously reported magnetic field "Infinity Sensor," named after its figure-ofeight topology and high bandwidth (>200 MHz), measures di/dt. Using the sensor signal as the only input, a detection circuit finds peak di/dt, and a high-speed integrator derives instantaneous load current. The reference voltage for the decision-making part of the circuit is automatically adjusted as a function of load current, in order to counteract the dependence of di/dt on load current. Experimental results on a 400 V, 2 kW buck converter show the protection circuit successfully activating within ±5°C of a preprogrammed junction temperature setting, independently of load current, for settings of 100, 120, and 140°C. Index Terms-Gallium Nitride (GaN), indirect temperature sensing, overtemperature protection, temperature-sensitive electrical parameters (TSEPs), turn-ON di/dt, wideband gap. I. INTRODUCTIONP ROTECTION circuits are typically necessary to make a power converter robust, increase functionality, and achieve sufficient reliability [1]-[3]. In particular, the control scheme of the converter should be capable of protecting the switches against overtemperature. A general practice in the industry is to place temperature sensing chips on the board, as close as possible to the switching devices, or, in systems using modules, the modules will often include a thermistor attached to the substrate.

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Self-Aging-Prognostic GaN-Based Switching Power Converter Using T_J -Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling

Chen

Brian

2021

IEEE Trans. Power Electron.

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Temperature measurements of GaN FETs by means of average gate current sensing

Cited by 3 publications

References 11 publications

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Self-Aging-Prognostic GaN-Based Switching Power Converter Using T_J -Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling

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Temperature measurements of GaN FETs by means of average gate current sensing

Cited by 3 publications

References 11 publications

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Self-Aging-Prognostic GaN-Based Switching Power Converter Using TJ -Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling

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Product

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Self-Aging-Prognostic GaN-Based Switching Power Converter Using T_J -Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling