Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers

Nakwaski, W.; Osiński, Marek

doi:10.1143/jjap.30.l596

Cited by 11 publications

(2 citation statements)

References 19 publications

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“…More details concerning our thermal-electrical model may be found in our previous papers (see e.g. Nakwaski and Osiński (1991 and Sarzała et al (1995)) where its earlier version was used to analyse arsenide diode lasers.…”

Section: Rt Operation Supply Voltage 10vmentioning

confidence: 99%

Temperature-enhanced radial current spreading in possible VCSEL structures of nitride lasers

Sarzała

Maćkowiak

Nakwaski

2002

Semicond. Sci. Technol.

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A computer simulation based on an advanced self-consistent thermal-electrical finite-element approach has been carried out to analyse electrical and thermal phenomena in possible electrically-biased axially-symmetric annular-contacted nitride VCSELs (vertical-cavity surface-emitting lasers). Joule heating within the upper p-type GaN layer has been determined to be the distinctly dominant heat source in this device. Our analysis revealed that during a continuous-wave (CW) room-temperature (RT) device operation, the highest-temperature area constitutes a ring within the above-mentioned layer close to the active-region perimeter. It dramatically enhances radial current flow from the annular p-side contact towards the centre of the structure before crossing the p-n junction. Therefore current injection into a central active region is considerably improved (by almost 170%!) in RT CW-operating nitride devices as compared with pulse-operating ones. Hence temperature-enhanced radial current spreading within the upper part of the annular-contacted CW nitride VCSELs may enable one to obtain their first RT operation.

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Section: Rt Operation Supply Voltage 10vmentioning

confidence: 99%

Temperature-enhanced radial current spreading in possible VCSEL structures of nitride lasers

Sarzała

Maćkowiak

Nakwaski

2002

Semicond. Sci. Technol.

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“…Particularly inadeqrte is the one-dimensional treatment of [Baets 19881, strongly exaggerating thermal problems by neglecting the lateral heat spreading, which in structures of cylindrical syrnmetry is of critical importance. This results in errors as high as 220% in predicted temperature distrib.,ion in the active region [Nakwaski 1991a]. It is also shown in [Nakwaski 1991b] that by simple technological means it is possible to i ease severity of heating effects.…”

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confidence: 96%

An Optoelectronics Research Center

Brueck¹

2006

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Thermal resistance of 1.3μm InGaAsP vertical cavity lasers

Shimizu

Babic

Dudley

et al. 1993

Micro & Optical Tech Letters

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The lhermal resistance of 1.3-pm InGaAsP vertical cavity lasers is calcirluied using the finite difference method in cylindrical coordinates. Three etched-well laser structures are compared and the therrnul resisiance is calculared for a range of active area diameters and a fypical cavity size. Llsing an InP regrown laser structure appears to he most promising for achieving room-temperature continuous operation of long-wavelength vertical cavity h e r s . 0 I993 John Wilev Kr Sof1.s. IllC. ABSTRACTIntegrated-circuit probe-excited horn-antenna arrays made in silicon are well developed. They are a very promising class of antenna arrays for millimeter-and submillimeter-wave applications. Further development of this technology involves integrating mixers and amplifiers into antenna arrays. In an effort to develop an horn-untennumixer array based on the existing technology, various antenna probes inside the pyramidal horns have been examined on scaled model horns at microwave frequencies. Modeling resulrs und design principles of these antenna probes are presented. 0 1993 John Wiley & Sons, Inr.

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Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers

Cited by 11 publications

References 19 publications

Temperature-enhanced radial current spreading in possible VCSEL structures of nitride lasers

Temperature-enhanced radial current spreading in possible VCSEL structures of nitride lasers

An Optoelectronics Research Center

Thermal resistance of 1.3μm InGaAsP vertical cavity lasers

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