Thermal resistance of 1.3μm InGaAsP vertical cavity lasers

Abstract

The lhermal resistance of 1.3-pm InGaAsP vertical cavity lasers is calcirluied using the finite difference method in cylindrical coordinates. Three etched-well laser structures are compared and the therrnul resisiance is calculared for a range of active area diameters and a fypical cavity size. Llsing an InP regrown laser structure appears to he most promising for achieving room-temperature continuous operation of long-wavelength vertical cavity h e r s . 0 I993 John Wilev Kr Sof1.s. IllC. ABSTRACTIntegrated-circuit probe-excited horn-antenna arrays made in silicon are well developed. They are a very promising class of antenna arrays for millimeter-and submillimeter-wave applications. Further development of this technology involves integrating mixers and amplifiers into antenna arrays. In an effort to develop an horn-untennumixer array based on the existing technology, various antenna probes inside the pyramidal horns have been examined on scaled model horns at microwave frequencies. Modeling resulrs und design principles of these antenna probes are presented. 0 1993 John Wiley & Sons, Inr.

<title>Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials</title>

“…Using the gain function g(\0, N, Ta), the average threshold carrier density NIh is obtained from the threshold condition th = 7 g(O,Nh,T) (14) with the overlap integral 7 = 0.41 calculated from the room temperature profiles given in Fig. 5 Ith/44a are shown in Fig.…”