Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

Abstract

In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moiré patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics.

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

“…Sequential growth of graphene/ h ‐BN on catalytic metal surfaces via chemical vapor deposition (CVD) has been extensively studied to form in‐plane heterostructure 9, 10, 14, 15, 16, 17, 18, 19, 20. Templated growth of h ‐BN starting from CVD graphene edges on copper has been realized with lattice coherency of the two crystals 14, 16.…”

“…However, imperfections still could be observed in graphene 9, 15, 21. Syntheses of graphene/ h ‐BN in‐plane heterostructure have also been achieved by etching regrowth or chemical conversion methods after growing a continuous h ‐BN film 18, 20. The etching regrowth or chemical conversion was found to start preferentially at the defective sites of h ‐BN, while the long growth process also creates many defects in h ‐BN lattices.…”

Fundamentals of Chemical Vapor Deposited Graphene and Emerging Applications

“…Subsequently, hydrogen-induced etching process of graphene or hBN layer has been developed for lateral epitaxial growth of h-BN/graphene structure with sharp interfaces [107]. Temperature-triggered chemical switching growth of in-plane and vertically stacked heterostructures has been also achieved in the same growth process [108]. There are significant potential to control the etched structure and domain formation in an hBN-graphene heterostructure to realize a considerable bandgap.…”

Graphene and Two-Dimensional Materials for Optoelectronic Applications

“…They mention that by controlling the growth conditions, one can obtain a relatively sharp interface in such a structure. Gao et al developed a CVD method to controllably grow vertical and lateral heterostructures of h-BN and graphene on Cu foils [93]. They used a novel temperature-triggered reaction process to selectively grow such heterostructures.…”