Tempered glass substrate effect on the growth of polycrystalline-silicon and its applications for reliable thin-film transistors

Park, Jae Hyo; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jeong; Lee, Sol Kyu; Lee, Yong Hee; Kiaee, Zohreh; Joo, Seung Ki

doi:10.1039/c5ra09194b

Cited by 5 publications

(3 citation statements)

References 30 publications

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“…Meanwhile, the TO peak is blueshifted to 516.3 cm −1 . A blueshift of the TO mode is attributed to either the quantum confinement from the Si quantum dots, less than 10 nm in size, a lattice expansion induced by laser-induced thermal heating [50], or the tensile stress exerted to Si crystals [51]. Also, the peak intensity of the TO mode significantly decreases compared to those (figures 8(a) and (b)) measured on smooth crack surfaces, which means that HSFLs have very high absorbance or strongly scatter laser light.…”

Section: Selective Hsfl Formation On Cracked Structuresmentioning

confidence: 99%

Femtosecond laser shockwave peening ablation in liquids for hierarchical micro/nanostructuring of brittle silicon and its biological application

Zhang

Ueki

et al. 2020

Int. J. Extrem. Manuf.

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This paper presents a new technique, termed femtosecond laser shock peening ablation in liquids (fs-LSPAL), which can realize simultaneous crack micro/nanomanufacturing and hierarchical micro/nanolaser ablation, giving rise to the formation of diverse multiscale hierarchical structures, such as macroporous ratcheted structures and en échelon microfringes decorated with parabolic nanoripples. Through analysis of surface morphologies, many phenomena have been confirmed to take place during fs-LSPAL, including en échelon cracks, nanostriation, ripple densification, crack branching, and selective formation of high spatial frequency laser-induced periodic surface structures of 100–200 nm in period. At a high laser power of 700 mW, fs-LSPAL at scanning speeds of 0.2 mm s−1 and 1 mm s−1 enables the generation of height-fluctuated and height-homogeneous hierarchical structures, respectively. The height-fluctuated structures can be used to induce ‘colony’ aggregates of embryonic EB3 stem cells. At 200 mW, fs-LSPAL at 1 mm s−1 is capable of producing homogeneous tilt macroporous structures with cracked structures interleaved among them, which are the synergistic effects of bubble-induced light refraction/reflection ablation and cracks. As shown in this paper, the conventional laser ablation technique integrated with its self-driven unconventional cracking under extreme conditions expands the horizons of extreme manufacturing and offers more opportunities for complex surface structuring, which can potentially be used for biological applications.

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Section: Selective Hsfl Formation On Cracked Structuresmentioning

confidence: 99%

Femtosecond laser shockwave peening ablation in liquids for hierarchical micro/nanostructuring of brittle silicon and its biological application

Zhang

Ueki

et al. 2020

Int. J. Extrem. Manuf.

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“…Используя значение смещения пика poly-Si, можно оценить значение напряжения согласно уравнению [12,13] Таким образом, в результате воздействия электронного пучка на пленки аморфного гидрогенизированного субоксида кремния впервые получен поликристаллический кремний (poly-Si). С помощью метода комбинационного рассеяния света для пленок кремния после отжига было показано, что напряжение в poly-Si изменяется в зависимости от времени экспозиции электронного пучка.…”

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Электронно-Пучковая Кристаллизация Тонких Пленок Аморфного Субоксида Кремния

Баранов¹,

Константинов²,

Щукин³

et al. 2021

Письма В Журнал Технической Физики

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Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of an electron beam irradiation of amorphous hydrogenated silicon suboxide films with a stoichiometric coefficient of 0.5 (a-SiO0.5:H) and a thickness of 580 nm. The accelerating voltage of the electron beam was 2000 V, and the beam current was 100 mA. Raman spectra of silicon films after annealing are obtained depending on the time of electron beam irradiation of the initial material. It is shown that as a result of annealing, poly-Si is formed, the stress in which varied from compression to tension depending on the time of exposure.

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“…However, for a display substrate such as glass and plastics, they are not able to withstand high temperature and high pressure, and growing stable thick silicon oxide using thermal oxidation or wet oxidation in high pressure is not possible. 10 Thus, forming a thin layer by oxidation to stabilize the poly-Si surface before depositing the gate dielectric was considered. Strong oxidizing agents of silicon such as HNO 3 , H 2 SO 4 , and HCl were proposed due to the effect of oxidation and removing the heavy metals on the poly-Si surface.…”

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confidence: 99%

Effect of Ultrathin Silicon Oxide Film for Enhanced Performance and Reliability of Metal-Induced Laterally Crystallized Thin-Film Transistors Using Silicon Nitride as a Gate Dielectric

Chae

Kim

Lee

et al. 2016

ECS J. Solid State Sci. Technol.

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In this work, we successfully fabricated high performance and excellent reliability of metal-induced laterally crystallized (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs) with various surface treatments. The MILC poly-Si TFTs using silicon nitride as a gate dielectric shows high grain-boundary and interface trap-density with the MILC poly-Si film. Therefore, several surface treatment techniques, including oxidizing silicon surface with HNO3, H2SO4, and HCl, as well as N2O plasma treatment, were investigated. Comparing the characteristics of the proposed MILC poly-Si TFTs, the N2O plasma treated was the most effective, showing superior electrical performance and reliability to the other surface treatment methods. The role of the N2O plasma is to insert nitrogen into the poly-Si surface, which causes a relaxation and passivation of the trap states by producing Si≡N strong bonds, while the surface treatments using acids simply oxidize Si atoms.

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Tempered glass substrate effect on the growth of polycrystalline-silicon and its applications for reliable thin-film transistors

Abstract: We investigated the unique growth behavior of metal-induced laterally crystallized polycrystalline-silicon under a tempered glass substrate and fabricated a stable thin-film transistor.

Cited by 5 publications

References 30 publications

Femtosecond laser shockwave peening ablation in liquids for hierarchical micro/nanostructuring of brittle silicon and its biological application

Femtosecond laser shockwave peening ablation in liquids for hierarchical micro/nanostructuring of brittle silicon and its biological application

Электронно-Пучковая Кристаллизация Тонких Пленок Аморфного Субоксида Кремния

Effect of Ultrathin Silicon Oxide Film for Enhanced Performance and Reliability of Metal-Induced Laterally Crystallized Thin-Film Transistors Using Silicon Nitride as a Gate Dielectric

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