Template-Assisted Scalable Nanowire Networks

Friedl, Martin; Cerveny, Kris; Weigele, Pirmin; Tütüncüoǧlu, Gözde; Martí‐Sánchez, Sara; Huang, Chunyi; Patlatiuk, Taras; Potts, Heidi; Sun, Zhiyuan; Hill, Megan O.; Güniat, Lucas; Kim, Wonjong; Zamani, Mahdi; Dubrovskiı̆, V. G.; Arbiol, Jordi; Lauhon, Lincoln J.; Zumbühl, Dominik M.; Morral, Anna Fontcuberta i

doi:10.1021/acs.nanolett.8b00554

Cited by 110 publications

(163 citation statements)

References 51 publications

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“…[ 29 ] The out‐of‐plane grown NW structures, however, need to be transferred from the growth wafer to a second substrate for device fabrication, which limits their scalability. [ 7,29 ] Very recently, high‐quality in‐plane NW networks have been successfully demonstrated with selective‐area [ 30,31 ] and template‐assisted [ 32 ] growth techniques, but the problems related to growth imperfections such as dislocation and polytypism still remain. In addition, the selective‐area growth works only for material systems that have good growth selectivity between oxides and semiconductors.…”

Section: Figurementioning

confidence: 99%

Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

et al. 2020

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attention due to its high hole mobility, [10][11][12][13] low effective mass in 2D hole gases, [14,15] good contacts with metals, [16][17][18] strong spin-orbit interactions, [19][20][21][22] capability of isotopic purification, [23] and compatibility with Si. These attractive features make Ge a promising candidate not only as a transistor channel material but also as a host for spin [6,24,25] and even topological qubits. [26,27] Excitingly, the first hole spin qubit [6] and proximity-induced superconductivity with a hard gap [28] have been realized recently in 1D Ge.Despite much progress that has been made so far, it remains a formidable challenge to have individuals as well as arrays of NWs with a high degree of addressability and scalability for the next generation of NW-based quantum devices. For example, in the field of group III-V semiconductors, precisely positioned NW networks have been achieved with predefined metal islands. [29] The out-of-plane grown NW structures, however, need to be transferred from the growth wafer to a second substrate for device fabrication, which limits their scalability. [7,29] Very recently, high-quality inplane NW networks have been successfully demonstrated with Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain-relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.

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Section: Figurementioning

confidence: 99%

Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

et al. 2020

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“…Even though the initial work was reported about 30 years ago, 27-30 only the recent promising results reported in Ref. [31][32][33][34][35] have renewed the interest in SAG by MBE.In this work, we present selective area growth of InAs NW networks by MBE, which are grown either on GaAs based buffer layers or directly on semi-insulating InP and GaAs substrates. We demonstrate growth of lithographically designed NW networks with well-defined junctions, where the faceting depends on the mask alignment to the crystal orientation of the substrate.…”

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confidence: 99%

Field effect enhancement in buffered quantum nanowire networks

Krizek

Sestoft

Aseev

et al. 2018

Phys. Rev. Materials

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129

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III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.Material science plays a key role in quantum computing research. Long quantum state lifetimes -the fundamental prerequisite for realizing quantum computers -rely on the ability to produce materials with high purity and structural quality. Together with the requirements of scalability and reproducibility, these properties are what mainly defines the challenges of material science in quantum computing today. Proposals for topological quantum computing, 1-3 which are based on hybrid semiconductor-superconductor nanowire (NW) networks, are being pursued by numerous research groups and have ignited intense research efforts on hybrid epitaxy. 4-8 NW scalability is tightly related to the semiconductor growth approach. Top-down lithography has been used to define NWs in two-dimensional layers 5,9 and a variety of methods have been pursued for alignment and positioning of bottom-up vapor-liquid-solid (VLS) grown NWs, such as dielectrophoresis techniques, 10 nanoscale combing 11 and magnetic aligning of NWs. 12 Despite of these developments, large-scale synthesis of bottom-up grown high-mobility NW networks that are compatible with epitaxial interwire connections and semiconductor/superconductor epitaxy has still not been realized. To realize the epitaxial connections, a lot of effort has been put into the growth of branched NWs via the VLS method. 8,13-15 A scalable approach has been developed in Ref. [16,17] using template assisted growth of inplane NW networks. 18 Nonetheless, this approach is not yet compatible with superconductor epitaxy. An alternative scalable approach is to use lithographically defined openings in a mask on a crystalline substrate. This method is referred to as selective area growth (SAG) and until recently has mainly been used in conjunction with metal organic chemical vapour deposition 19,20 , metal organic vapour phase epitaxy 21,22 , chemical beam epitaxy and metal organic molecular beam epitaxy (chemical beam epitaxy). [23][24][25][26] In contrast to molecular beam epitaxy (MBE), the dissociation kinetics of the chemical precursors in these methods enhance the growth selectivity on masked substrates by expanding the growth parameter window, ...

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“…A more scalable approach, would be to use an in-plane selective area growth (SAG) technique (i.e., parallel to the substrate surface), that relies on a template or mask to selectively grow one semiconductor material on top of another [13][14][15][16][17][18][19] . This technique has several advantages over out-of-plane growth.…”

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confidence: 99%

In-plane selective area InSb–Al nanowire quantum networks

Veld

Schaller

et al. 2020

Commun Phys

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Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we utilize an in-plane selective area growth technique for InSb-Al semiconductor-superconductor nanowire networks. Transport channels, free from extended defects, in InSb nanowire networks are realized on insulating, but heavily mismatched InP (111)B substrates by full relaxation of the lattice mismatch at the nanowire/substrate interface and nucleation of a complete network from a single nucleation site by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherence lengths exceeding several micrometers with Aharonov-Bohm oscillations up to five harmonics and a hard superconducting gap accompanied by 2e-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network.

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Template-Assisted Scalable Nanowire Networks

Cited by 110 publications

References 51 publications

Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

Field effect enhancement in buffered quantum nanowire networks

In-plane selective area InSb–Al nanowire quantum networks

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