Terahertz emission mechanism of magnesium doped indium nitride

Ahn, Hyeyoung; Yeh, Yi Jou; Yang, Hong; Gwo, Shangjr

doi:10.1063/1.3270042

Cited by 18 publications

(15 citation statements)

References 17 publications

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“…1,2 Moreover, InN has a direct band gap of ;0.7 eV which enables the III-nitride semiconductors to cover the wave length from deep ultraviolet (AlN, Eg 5 6.2 eV) to near infrared (InN, Eg 5 0.7 eV). 3,4 InN has shown great potential in the fields of terahertz emitters, [5][6][7][8] light-emitting 9 and photovoltaic applications, 10 etc. In 1972, Hovel and Cuomo 11 grew InN thin films on sapphire by using radio-frequency sputtering for the first time.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Gao

Guan

et al. 2013

J. Mater. Res.

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InN films have been grown on sapphire substrates nitrided by N plasma with different durations by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). In-depth investigation reveals that AlN is generated on a sapphire surface during the nitridation, and 60 min nitridation helps in the formation of an ordered and flat AlN interlayer between the substrate and the InN film, which improves the surface migration of In atoms on the substrate, and consequently helps in obtaining a single-crystalline c-plane InN film of high quality with 1.0 Â 10 19 cm À3 carrier density and 1350 cm 2 /(VÁs) carrier mobility. Too short nitridation duration will result in a polycrystalline InN film, and too long nitridation duration will damage the surface quality of the newly generated AlN interlayer which consequently deteriorates the InN film quality. Control of the AlN interlayer quality plays a critical role in the growth of a high-quality InN epitaxial film on the sapphire substrate.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Gao

Guan

et al. 2013

J. Mater. Res.

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“…9 Sometimes, it happens that both the VLS and VS processes concurrently take place in one crystal growth process. 9,10 InN, as an important III-V compound semiconductor with a direct band gap energy of about 0.7 eV at room temperature 11 and surface electron accumulation, 12 has attracted growing attention owing to its good performances in semiconductor optoelectronic, 13 Tera-Hertz emission devices, 14,15 as well as high-speed heterojunction FETs. 16 At present, plentiful InN nanostructures, including NWs, 3 nanorods, 17 nanotubes, 18 nanobelts, 19 nanonetworks 20 and nanoflowers 21 have been reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires

Cheng

et al. 2012

AIP Advances

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Au-assisted growth of InN nanowires (NWs) was accomplished by a simple chemical vapor deposition system. The as-prepared InN NWs exhibit two morphologies with different growth directions: periodic NWs (PNWs) and smooth NWs (SNWs) along <0001> and <11 2¯ 0> , respectively. The PNWs with crinoids morphology resulted when larger Au particles (∼40 nm in diameter) were used, while the SNWs with smooth sidewalls were obtained when smaller Au particles (∼10 nm in diameter) served as the collector. Furthermore, the mechanism of this growth behavior was discussed in terms of the effect of catalyst nanoparticle size

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“…where n t ( p t ) includes both background carriers and photoexcited carriers, and n ( p ) and D n (D p ) correspond to the mobility and diffusion coefficient of electrons (holes), respectively. The fast decay of THz signals from c-InN:Mg with the increase of the background carrier density and the flip of the polarity indicates the interplay of the diffusion and drift currents, which direct the outward and inward directions of the InN film, respectively 8). The carrier density dependence of THz radiation of a-InN:Mg shown inFig.…”

mentioning

confidence: 92%

Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films

Ahn¹,

Yeh²,

Yang

et al. 2010

Appl. Phys. Express

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We report terahertz (THz) generation from Mg-doped nonpolar (a-plane) InN (a-InN:Mg). While the amplitude and polarity of the THz field from Mg-doped polar (c-plane) InN depend on the background carrier density, the p-polarized THz field from a-InN:Mg has background carrierinsensitive intensity and polarity, which can be attributed to carrier transport in a polarization-induced in-plane electric field. A small but apparent azimuthal angle dependence of the THz field from a-InN:Mg shows the additional contribution of the second-order nonlinear optical effect. Meanwhile, in this study, we did not observe the contribution of the intrinsic in-plane electric field which is significant for high stacking fault density nonpolar InN.

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Terahertz emission mechanism of magnesium doped indium nitride

Cited by 18 publications

References 17 publications

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires

Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films

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