Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

Santato, Clara; Capelli, Raffaella; Loi, Maria Antonietta; Murgia, Mauro; Cicoira, Fabio; Roy, V. A. L.; Stallinga, Peter; Zamboni, R.; Rost, Constance; Karg, Siegfried; Muccini, Michele

doi:10.1016/j.synthmet.2004.08.028

Cited by 107 publications

(84 citation statements)

References 19 publications

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“…4 Ever since, other research groups have published results on tetracene-based LEOFETs, dealing with experimental 5,6 as well as theoretical aspects. 7,8 This same basic type of LEOFETs, based on one unipolar organic semiconductor, has also been realized using polymers 9, 10 and doped small molecules 11 as the organic semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel

Vusser

Schols

Verlaak

et al. 2006

Applied Physics Letters

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We have realized a light-emitting organic field-effect transistor (LEOFET). Excitons are generated at the interface of an n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The recombination region is several microns from the metal electrodes. Therefore, the exciton quenching probability in this device is reduced. Numerical simulations show that the recombination region can move within the transistor channel by changing the biasing conditions.

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Section: Introductionmentioning

confidence: 99%

Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel

Vusser

Schols

Verlaak

et al. 2006

Applied Physics Letters

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“…Recently, a unipolar lightemitting OFET based on tetracene was reported. [12][13][14] However, in unipolar devices, light emission is restricted to a region very close to the contact that injects the charge carriers of the lower mobility. In contrast, an ambipolar lightemitting transistor would allow the electron-hole balance as well as the location of the recombination zone between source and drain electrodes to be tuned by the gate voltage, hence improving the quantum efficiency.…”

mentioning

confidence: 99%

Ambipolar light-emitting organic field-effect transistor

Rost

Karg

Rieß

et al. 2004

Applied Physics Letters

310

221

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We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain–source voltage VDS and the gate voltage VG. Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.

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“…A successive study proposed a phenomenological model to explain the working mechanism of the OLET. The proposed model assumed that the voltage drop at drain electrode, caused by a contact barrier, induces a distortion of the Highest Occupied (HOMO) and Lowest Unoccupied (LUMO) Molecular Orbital levels of tetracene near the contact, thus determining the conditions for the tunnelling of electrons from the drain to the LUMO of the organic (Santato et al, 2004). In the proposed model, the external quantum efficiency (EQE) is proportional to the tunneling probability and thus proportional to the drain-source voltage (V ds ), but it is independent from gate voltage (V g ).…”

Section: Unipolar Oletsmentioning

confidence: 99%