2005 International Conference on Power Electronics and Drives Systems
DOI: 10.1109/peds.2005.1619687
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The Analysis of Conduction and Switching Losses in Three-Phase OHSW Multilevel Inverter Using Switching Functions

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Cited by 18 publications
(11 citation statements)
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“…Hussein Ashram M G, Fathi S H and Gharehpetian B have suggested selecting the suitable power semiconductor devices for asymmetric multi-level inverter which is very reliable and safe [9], so that the IGBT device is selected for this work. Jeevananthan S, Nandhakumar R and Dananjayan have introduced inverted sine carrier for fundamental strengthening in PWM inverters and FPGA based implementations [10], but it is not suitable for variable frequency ISPWM.…”
Section: Introductionmentioning
confidence: 99%
“…Hussein Ashram M G, Fathi S H and Gharehpetian B have suggested selecting the suitable power semiconductor devices for asymmetric multi-level inverter which is very reliable and safe [9], so that the IGBT device is selected for this work. Jeevananthan S, Nandhakumar R and Dananjayan have introduced inverted sine carrier for fundamental strengthening in PWM inverters and FPGA based implementations [10], but it is not suitable for variable frequency ISPWM.…”
Section: Introductionmentioning
confidence: 99%
“…Because of the economical and technical importance of power dissipation, the designers must consider and minimize the losses of these devices [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…Because of economical and technical importance of power dissipation, the designers must consider and minimize the losses of these devices [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…The leakage current during off-state is negligibly small therefore the power losses during this state can be neglected. As a result, only conduction and switching losses are usually considered [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
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