2015
DOI: 10.1007/s11434-015-0831-y
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The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

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Cited by 9 publications
(2 citation statements)
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“…As detailed in Ref. 46, the side-jump terms due to static (impurities or grain boundaries) and dynamic (phonons) scattering sources as well as the intrinsic contribution originating from the band structure [48][49][50][51][52][53][54] are entangled in β H 0 , γ H , and β H 1 in a complex manner. Nevertheless, as discussed in Ref.…”
Section: Methodsmentioning
confidence: 99%
“…As detailed in Ref. 46, the side-jump terms due to static (impurities or grain boundaries) and dynamic (phonons) scattering sources as well as the intrinsic contribution originating from the band structure [48][49][50][51][52][53][54] are entangled in β H 0 , γ H , and β H 1 in a complex manner. Nevertheless, as discussed in Ref.…”
Section: Methodsmentioning
confidence: 99%
“…The impurities are introduced by using the shadow mask technique. [21] This enables us to have the epitaxial Bi (111) film on Si (111) with half of the surface covered in situ by 0.5-ML Cu, Fe or Co before the MgO capping. The side by side samples thus have half a pristine surface and half the surface covered by impurities on top.…”
Section: Methodsmentioning
confidence: 99%