The buried stacked insulator—a new silicon on insulator structure formed by ion beam synthesis

Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen

“…The buried layer seems to be not as perfect as S 1 or S 2 , and there are transition regions in the buried layers. Bubbles would be formed in the transition region of SOI wafers fabricated with high implantation dose of nitrogen [7]. Therefore, the interfaces between buried insulator layers and substrate silicon, which should have been sharp and smooth, are now varied and appear fluctuation.…”

“…In parallel, the requirements for SOI wafer quality become more and more severe and many efforts have been made to realize high quality. Many teams went on with their work with co-implanting ions, such as O + , N + , F + and so on [4][5][6][7][8][9][10][11], to improve the property of the SOI wafer radhardness to harden the SOI devices. However, there have not been any research teams who have studied the relationship between dose of N + ions implanting into separation-byimplantion SIMOX wafer and the microstructure, while the status of the microstructure closely affects the properties, especially the radiation hardness of devices fabricated on the materials.…”