NAA, TEM, DLTS, and EBIC investigations of Cu‐contaminated CzSi with an intrinsic‐gettering procedure realized by a multistep heat tretament demonstrate the efficiency of intrinsic gettering concerning redistribution to volume defects for Cu‐contamination up to 1016 cm−3. The Cu‐precipitation at the surface can still be suppressed for such contamination due to volume defects. However, in this case the concentration of contamination induced deep level centers at the surface is independent of the volums defect density. Only for Cu‐contamination of about 1015 cm−3 the gettering effect is strong enough to prsrent the introduction of contamination induced deep levels at the surface.

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