The Capture of Hot Electrons by Gold Centres in n-type Germanium

Pratt, Rob; Ridley, B. K.

doi:10.1088/0370-1328/81/6/303

Cited by 55 publications

(10 citation statements)

References 16 publications

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“…This model successfully explains the NDC observed during experiments with Au Ϫ and Au ϭ centers in n-Ge ͑albeit the barrier height is lower than expected͒. [119][120][121][122] A treatment of the nonlinear problem of the charge and field distribution in the presence of hot electrons 123 shows that the condition for domain formation and motion is simply a current-voltage characteristic with an NDC region. The mechanism leading to the NDC does not influence the generation of domains as such but affects the quantitative aspects of the domains.…”

Section: Electron Trapping As a Cause Of Ndcmentioning

confidence: 91%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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Articles you may be interested inBroadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam Semi-insulating GaAs shows current oscillations if a high dc voltage is applied to a sample. These oscillations are caused by traveling high-electric-field domains that are formed as a result of electric-field-enhanced electron trapping. This article describes the various types of experiments that have been carried out with this system, including recent ones that use the electro-optic Pockels effect in order to measure the local electric fields in the sample in a highly accurate manner. An historical overview of the theoretical developments is given and shows that no satisfying theory is currently available. A list of all the required ingredients for a successful theory is provided and the experimental data are explained in a qualitative manner. Furthermore, the main electron trap in semi-insulating GaAs is the native defect EL2, the main properties of which are described.

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Section: Electron Trapping As a Cause Of Ndcmentioning

confidence: 91%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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“…The shape of the d.c. current-field characteristics was 1 lnSb filter a t 7 7 4 1 . Electric field ( v cm-'1 Figure 3 Comparison between the d c characteristics of (100) oriented samples of Pt-and Au-doped Ge at 77 K (for Au-doped data see Pratt and Ridley (1963)). …”

Section: Experimental Results At 77°kmentioning

confidence: 99%

“…The values of zo were determined from the high-field current decays, using the ratio of the instantaneous to steady state current densities and the capture time at that field. This method has been compared (Pratt and Ridley 1963) with the conventional method and found to be satisfactory. At 2 6 .…”

Section: Experimental Techniquesmentioning

confidence: 99%

“…In order to effect a direct comparison between Au and Pt results we have deduced the various parameters for the Pt centre using the phenomenological model of Pratt and Ridley (1963). This model incorporates 'tunnelling' through the repulsive Coulombic potential around the impurity and the capture rate is expressed as :…”

Section: Analysis Of Trapping Data At 77" Kmentioning

confidence: 99%

“…Electron spin resonance studies have been reported for Pt in Si (Woodbury and Ludwig 1962) and spontaneous Jahn-Teller effects have been observed, but from these it is virtually impossible to imply the behaviour of Pt in Ge. We have studied samples of Pt-doped Ge using well proven techniques Ridley 1965a, Ridley andPratt 1965) and we have deduced the charge, -Zlel, on the centre in two ways: firstly by interpreting Hall mobility and resistivity data using a modified Brooks--Herring scattering treatment and secondly by interpreting hot electron trapping data at 77" K using the phenomenological model of Pratt and Ridley (1963). In the first method the value of 2 deduced depends critically on the density of occupied and unoccupied trapping centres, whereas in the second, the value of Z deduced depends on the hot electron temperature which, at 77" K, is not affected significantly by moderate impurity content.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fifth All-Union Conference on the Theory of Semiconductors

Tolpygo¹,

Levinson²

1964

Sov. Phys. Usp.

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Trapping and Hall mobility data have been obtained for samples of Ge doped with Pt and compensated with Sb which suggest that the charge state of the empty 0.2 ev Pt level is triply negative. The thermal electron capture rates are (1.8 i: 0.6) x lo-' cm3 s -' at 77°K and (6 2) x lo-'' cm3 s-' at 2 6 . 2 "~. These rates are much higher than for the 0.2 ev Aucentre. The maximum high-to-low field capture rate ratios were 8.4 and 315 respectively and negative resistance phenomena were observed at both temperatures. Parameters for a phenomenological treatment of the trapping curves are given and the results compared with published data for Au-doped Ge. Two models involving Jahn-Teller effects are proposed which may account for the apparent highly charged nature of the empty Pt level (-31el) and which make this impurity of interest for further study.

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Experimental study concerning the velocity of high field domains in CdS single crystals

Germanova

Marinova

Stefanova

1970

Phys. Stat. Sol. (a)

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Current oscillations are described which occur in CdS crystals in the region of N‐shaped negative differential conductivity of photocurrent–voltage characteristics at relative low field strength (5 × 102 to 2 × 103 V/cm). The main characteristics of the oscillations and the conditions for their appearance have been investigated in detail. It is shown that the current oscillations are connected with a steady periodical motion of electrical domains. The dependence of the electron capture coefficient on the field strength has been established and the model of recombination instability is used to discuss the experimental results.

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The Capture of Hot Electrons by Gold Centres in n-type Germanium

Cited by 55 publications

References 16 publications

Slow domains in semi-insulating GaAs

Slow domains in semi-insulating GaAs

Fifth All-Union Conference on the Theory of Semiconductors

Experimental study concerning the velocity of high field domains in CdS single crystals

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