The device with the sole aluminium cathode is able to produce a comparably white electroluminescence efficiency of 1.31 cd/A to that of the device using low work function cathodes (such as Ba, Ca, etc.). The CIE coordinates of the white light emission consisting of red, green and blue three components are nearly at (0.34, 0.35). The mechanism of the white light emission from the device with the Al cathode is investigated, which is related to the efficient injection of electrons through the interface of PFN-NaIr/Al.
Trapping and Hall mobility data have been obtained for samples of Ge doped with Pt and compensated with Sb which suggest that the charge state of the empty 0.2 ev Pt level is triply negative. The thermal electron capture rates are (1.8 i: 0.6) x lo-' cm3 s -' at 77°K and (6 2) x lo-'' cm3 s-' at 2 6 . 2 "~. These rates are much higher than for the 0.2 ev Aucentre. The maximum high-to-low field capture rate ratios were 8.4 and 315 respectively and negative resistance phenomena were observed at both temperatures. Parameters for a phenomenological treatment of the trapping curves are given and the results compared with published data for Au-doped Ge. Two models involving Jahn-Teller effects are proposed which may account for the apparent highly charged nature of the empty Pt level (-31el) and which make this impurity of interest for further study.
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