The Characteristics of $\hbox{H}^{+}$ Ion-Sensitive Transistor Driving With MOS Hybrid Mode Operation

Low Gate Voltage Operated Multi-emitter-dot H + Ion-Sensitive Gated Lateral Bipolar Junction Transistor

“…In a previous work, we proposed the possibility of a gated lateral BJT structure for ion sensor application. [13] In addition, we proved that the gated lateral BJT ion sensor has a higher sensitivity than that of the classical ISFET. [15] Further, based on the gated lateral BJT ion sensing technology, we developed a Creactive protein biosensor with a large dynamic range characteristic.…”

“…Recently, the hot issues in ISFET research have been the focus on new materials and structures for achieving high sensitivity, low noise, and low power devices. ISFET technology is developing along with many other technologies, such as charge transfer technology [8,9] to obtain high spatial resolution, the high electron mobility transistor (HEMT) with AlGaN/GaN technology [10,11] to achieve high transconductance, nano-technologies [7,12] to increase sensitivity, and gated lateral bipolar junction transistor (BJT) technology [13] to decrease the 1/𝑓 noise. Among these technologies, the gated lateral BJT technology not only has the best signal to noise characteristics but it can also be fabricated by using standard complementary metal-oxide-semiconductor transistor (CMOS) processes.…”

Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair

“…Besides, a vertical p-n-p BJT can be formed, but cannot be operate because the lateral collectors (drains) and the substrate were grounded. Each gated lateral BJT component could be operated under the MOSFET operation mode, BJT operation mode, and the MOSFET-BJT hybrid operation mode, which have been described in detail in previous works [ 12 , 13 , 14 , 15 , 16 , 17 ]. In other words, the MOSFET functional part is switched on by the gate bias supply, and the BJT functional part is switched on by the base current input.…”

“…This special device combines a MOSFET and a BJT, and was developed for various power device applications [ 11 ]. In previous works, we developed a gated lateral BJT using the standard CMOS process for several sensor applications to achieve specific characteristics such as large dynamic range, high transconductance, and low gate bias [ 12 , 13 , 14 , 15 , 16 , 17 ].…”

1.5.5 Room temperature benzene gas detection using gated lateral BJT with assembled solvatochromic dye

“…However, the disadvantage of high temperature operation cause them lose the low power advantage which the common MEMS and COMS technologies have [5,6]. In the previous works, we found the gated lateral bipolar junction transistor (BJT) can be used as sensor device which similar to metal-oxide-semiconductor field-effect transistor (MOSFET) based ionsensitive field-effect transistor (ISFET) [7]. Besides, we have illustrated that the gated lateral BJT can be used for protein biosensor and VOCs gas sensors using Reichardt's dye sensing membrane in room temperature conditions [8,9].…”