Low‐k dielectrics have been developed as an interlayer insulating material in the large scale integrated circuitry devices by the copolymerization of various weight percentages (10, 20, 30, and 40 wt%) of cyanate ester tethered POSS (POSS‐OCN) and bisphenol‐A cyanate ester (BACY) to obtain BACY/POSS‐OCN nanocomposites. The reinforcement of POSS‐OCN significantly contributes to the reduction in the value of dielectric constant and dielectric loss as well, which might be due to the presence of porous structured POSS‐OCN. The 30 wt% POSS‐OCN/BACY nanocomposite possesses the lowest value of dielectric constant of 1.81 at 1 MHz. Copyright © 2016 John Wiley & Sons, Ltd.