The correlation between the thermoelectric properties and stoichiometry in the boron carbide phase B4C-B10.5C

Bouchacourt, M.; Thévenot, F.

doi:10.1007/bf01026319

Cited by 134 publications

(83 citation statements)

References 10 publications

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“…The present values were about four times greater than those of hot pressed [9][10][11] and CVD 12) specimens, and were almost the same as those of arc-melted specimen.…”

Section: Electrical Conductivitysupporting

confidence: 50%

“…4) These features provides wide variety of applications for abrasives, 5) nuclear controlling rods 5) and thermoelectrics. [6][7][8][9][10][11][12][13] However, the high hardness and the low thermal conductivity could be drawbacks for machinability to complicated shapes 5) and for thermal-shock resistance, 3,5) respectively. By making B 4 C-based composites with electrically and thermally conductive ceramics, the application of B 4 C would be expanded to wider fields because of the capability of electric discharge machining and the improvement of thermal shock resistance.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Directionally Solidified B4C-TiB2 Composites Prepared by a Floating Zone Method

2002

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Directionally solidified B 4 C-TiB 2 composites were prepared by a Floating Zone method. TiB 2 phases in a rod shape were continuously connected in the B 4 C matrix. The c-axes of TiB 2 and B 4 C phases were perpendicular and tilted 22 • to the growth direction, respectively. The (101) and (120) planes of the B 4 C were in parallel to the (001) and (100) planes of TiB 2 , respectively. The electrical conductivity of the composite parallel to the growth direction (σ ) was greater than monolithic B 4 C by a factor of 100 to 1000. The thermal conductivity of the composite parallel to the growth direction (κ ) was about one and a half times as high as that of B 4 C. The anisotropy of electrical and thermal conductivity were basically explained by a mixing law using the values of B 4 C and TiB 2 . The microhardness of the composite was almost the same as that of B 4 C. The electric discharge machining of the composite was possible owing to the enhancement of electrical conductivity.

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“…The present values were about four times greater than those of hot pressed [9][10][11] and CVD 12) specimens, and were almost the same as those of arc-melted specimen.…”

Section: Electrical Conductivitysupporting

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Characterization of Directionally Solidified B4C-TiB2 Composites Prepared by a Floating Zone Method

2002

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“…This might be also verified by small mobility as shown later. Figure 4 shows the temperature dependence of electrical conductivity for the hot-pressed B 6 O and B 4 C. 1,3,5,6) The electrical conductivity of B 6 O was 1.1 × 10 2 Sm −1 at 1020 K. The electrical conductivity of fully dense B 6 O will be greater, because those of B 4 C were affected by porosity. The electrical conductivity of B 6 O increased with increasing temperature.…”

Section: Resultsmentioning

confidence: 99%

“…They have moderately high electrical conductivity, anomalously large Seebeck coefficient and low thermal conductivity as have been reported for boron carbide, [1][2][3][4][5][6] α-AlB 12 7, 8) and B 12 Si. 9) Among these boron-rich borides, boron carbide has been most widely studied.…”

Section: Introductionmentioning

confidence: 97%

Thermoelectric Properties of Hot-pressed Boron Suboxide (B6O)

et al. 2002

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Boron suboxide (B 6 O) sintered bodies were prepared by a solid state reaction and a hot pressing method. The thermoelectric properties of B 6 O were compared with those of B 4 C. The electrical conductivity was smaller than that of B 4 C, and the Seebeck coefficient was twice as large as that of B 4 C indicating p-type conduction. The hopping conduction of electronic charge carriers was suggested from the temperature dependencies of the electrical conductivity and mobility. The thermal conductivity was greater than that of B 4 C. The thermoelectric dimensionless figure-of-merit increased with increasing temperature, and was 0.62 × 10 −3 at 1000 K. This value was almost in agreement with that of B 4 C.

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“…Boron carbide is studied as a candidate for high temperature energy conversion showing thermoelectric properties. 1) As a semiconductor or metallic compound (depending on its stoichiometry), boron carbide is also of interest for electronics [24 and therein refs. ].…”

Section: Introductionmentioning

confidence: 99%

Tough and dense boron carbide obtained by high-pressure (300 MPa) and low-temperature (1600°C) spark plasma sintering

Badica

Grasso

Borodianska

et al. 2014

J. Ceram. Soc. Japan

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Dense boron carbide (above 95%) was achieved through high pressure (300 MPa) and low temperature (1600°C) Spark Plasma Sintering (SPS). This approach resulted in improvement of fracture toughness and of dynamic toughness when compared to corresponding toughness values of the sample sintered by conventional SPS (2100°C, 50 MPa). Dynamic toughness was extracted from Split Hopkinson Pressure Bar measurements. Results are understood based on microstructure and on very different behaviour of the samples in respect to residual B 2 O 3 and carbon available in the raw B 4 C powder.

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The correlation between the thermoelectric properties and stoichiometry in the boron carbide phase B4C-B10.5C

Cited by 134 publications

References 10 publications

Characterization of Directionally Solidified B<SUB>4</SUB>C-TiB<SUB>2</SUB> Composites Prepared by a Floating Zone Method

Characterization of Directionally Solidified B<SUB>4</SUB>C-TiB<SUB>2</SUB> Composites Prepared by a Floating Zone Method

Thermoelectric Properties of Hot-pressed Boron Suboxide (B<SUB>6</SUB>O)

Tough and dense boron carbide obtained by high-pressure (300 MPa) and low-temperature (1600°C) spark plasma sintering

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