The decrease of ‘‘random telegraph signal’’ noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation

Abstract

The low-frequency (LF) noise behavior of metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied when cycled between inversion and accumulation. On large-area devices the decrease of the LF noise is systematically found, and supports the observations by Bloom and Nemirovsky [Appl. Phys. Lett. 58, 1664 (1991)]. The random telegraph signal (RTS) noise observed in small (submicrometer) devices disappears when the transistor is cycled into accumulation. The drop in LF noise observed may thus be explained by the fact that most or all of the RTSs, which are caused by carrier trapping into slow oxide states, no longer contribute to the noise of the system. The method indicates a possibility to separate the contributions of different sources of 1/f noise in MOSFETs.

Interpretation of MOS transistor mismatch signature through statistical device simulations

“…In other words: if the measurement is fast enough, a possible contribution to the mismatch could be suppressed. This is very similar to other experiments where 1/f noise was shown to be reduced when large slow signal (switched measurements) was applied [76,77,78,79].…”

Low-Frequency Noise Phenomena in Switched MOSFETs

“…5 One likely scenario [43] is that the trap density deeper in the bandgap is lower. 6 Fig. 8 shows that traps deeper in the bandgap are the ones contributing LF noise when the device is periodically turned on and off, and if the trap density is lower there as is often observed [43], this explains why turning the device on and off lowers the LF noise.…”

“…5 An individual small device will behave according to the traps it happens to contain, but the ensemble average of the noise performance will be the same as for a single large device with many traps, assuming that individual traps make uncorrelated contributions to the output noise. 6 The trap depth distribution in the oxide may still be uniform: Nonuniformity in E does not preclude the emergence of a 1=f spectrum. ples are presented of how LF noise under LSE influences the design of analog circuits.…”

“…This means that the LF noise of the device not only depends on the present bias state of the device but also on the bias history of the device. This effect is associated with the emptying of traps that cause RTS noise [6]. Application of this effect was demonstrated in oscillators [8]- [10], operational amplifiers [11] and various other circuits [12]- [15].…”

Burst noise in the HAWAII-1RG multiplexer

“…[1][2][3][4][5][6][7] It is characterized by rapid current level shifts in both positive and negative directions and can have varying magnitudes. To cause burst noise, the generation or recombination in a single defect or trap either modifies the conductivity of a constrained current channel or reduces the energy barrier between two regions, enabling carriers to tunnel through the barrier more readily.…”