The demonstration of colossal magneto-capacitance and &amp;#x201C;negative&amp;#x201D; capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design

Liao, Ming-Han; Huang, Sung-Wei; Liu, C. Y.; Chen, P. G.; Kao, Shih-Han; Lien, Chuen‐Der

doi:10.1109/vlsit.2014.6894375

Cited by 3 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the BFO/BTO ML system, the complex BFO and BTO diffraction patterns in the split conditions from Condition A (ML-A) to Condition C (ML-C) are shown in Figure 2c. It can be observed that all prepared ML multi-ferroic BFO/BTO samples were polycrystalline in nature with a rhombohedral distortion for BFO and a tetragonal distortion for BTO [4], respectively.…”

Section: Resultsmentioning

confidence: 99%

“…With the growth and the recent development of magnetic sensors [1,2], magnetic electric devices [3,4], and logic Magneto-Electric Spin-Orbit (MESO) devices [5,6], a multiferroic material with a good ferroelectricity, low tunneling current (J g ), and strong magnetoelectric effect is needed urgently. In the past, we investigated the material properties of pure ferroelectric BaTiO 3 (BTO) and pure multi-ferroic BiFeO 3 (BFO) thin films separately [7,8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Multi-Ferroic Properties on BiFeO3/BaTiO3 Multi-Layer Thin-Film Structures with the Strong Magneto-Electric Effect for the Application of Magneto-Electric Devices

Yen

Feng

et al. 2021

Coatings

View full text Add to dashboard Cite

The characteristics of X-ray Diffraction (XRD), Current (I)-Voltage (V), and the Polarization-Electric field (P-E) on the BiFeO3 (BFO), BaTiO3 (BTO), and our proposed Multi-Layer (ML) BiFeO3/BaTiO3 (BFO/BTO) samples are studied systemically. The influence of these films with and without different external Magnetic (Mex.) inputs is also investigated. Our proposed multi-ferroic ML BFO/BTO sample has a lower tunneling current (Jg) (~5 × 103 times) and a stronger magneto-electric effect (an ~25 times higher value of the change of saturated polarization Ps with the Mex. inputs than the pure multi-ferroic BFO sample. The material properties for ML BFO/BTO samples can be optimized with the combination of the advantages of BFO and BTO thin films. The stronger magneto-electric effect in our proposed ML samples can have many applications such as magnetic sensors, magnetic electric devices, and logic Magneto-Electric Spin–Orbit (MESO) devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multi-Ferroic Properties on BiFeO3/BaTiO3 Multi-Layer Thin-Film Structures with the Strong Magneto-Electric Effect for the Application of Magneto-Electric Devices

Yen

Feng

et al. 2021

Coatings

View full text Add to dashboard Cite

show abstract

“…Post deposition annealing (1150 • C, 10 minutes) was used on the BaTiO 3 HK layer to form the tetragonal phase, which has the higher intrinsic K value (∼178) and the better sensitivity for the K value improvement with the implement of the magnetic field. 5,9 Following the deposition of the HK/MG layers, lithography process and Cl plasma dry etching process were employed to define and pattern the gate stack region (channel length L g = 10 µm). Wafers were then implanted with phosphorus (P + , 18 KeV, and 4 × 10 15 cm −2 ) ions to form the self-aligned n + S/D regions.…”

Section: Methodsmentioning

confidence: 99%

The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor

Liao

Huang

2015

AIP Advances

Self Cite

View full text Add to dashboard Cite

The promising magnetic Ge metal-oxide-semiconductor field-effect transistor (MOS-FET) is demonstrated by the implement of the BaTiO 3 as the gate dielectric layer and the magnetic FePt film as the metal gate (MG) on the Ge (100) substrate. The designed magnetic FePt MG with the intrinsic 0.2 Tesla magnetic field along the vertical direction leads to ∼0.75 nm equivalent-oxide-thickness (EOT) reduction, ∼100X gate leakage (J g ) reduction, and ∼50% on-current (I on ) enhancement in the Ge FET due to the demonstration of the colossal magneto-capacitance effect. The influence of the magnetic field along different directions such as the vertical and the lateral direction on the Ge FET is also investigated in this work. The designed magnetic gate stack scheme on the Ge FET with the better Jg-EOT gate stack characteristics,

show abstract

The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme

Liao

Huang

2015

Applied Physics Letters

View full text Add to dashboard Cite

In this work, the tetragonal-phase BaTiO3 high dielectric (HK) layer and the magnetic FePt metal gate (MG) film are proposed to be the gate stack scheme on the Ge three dimensional (3D) n-type multi-gate-field-effect transistors (FETs). The ∼75% dielectric constant (κ-value) improvement, ∼100× gate leakage (Jg) reduction, and ∼70% on-state current (Ion) enhancement are achieved due to the colossal magneto-capacitance effect. The magnetic field from the magnetic FePt MG film couples and triggers more dipoles in the BaTiO3 HK layer and then results in the super gate stack characteristics. The promising transistor's performance (∼200 μA/μm on the device with the gate length Lch = 60 nm) on the high mobility (Ge) material in the 3D n-type multi-gate-FETs device structure demonstrated in this work provides the useful solution for the future advanced logic device design.

show abstract

The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design

Cited by 3 publications

References 4 publications

Multi-Ferroic Properties on BiFeO3/BaTiO3 Multi-Layer Thin-Film Structures with the Strong Magneto-Electric Effect for the Application of Magneto-Electric Devices

Multi-Ferroic Properties on BiFeO3/BaTiO3 Multi-Layer Thin-Film Structures with the Strong Magneto-Electric Effect for the Application of Magneto-Electric Devices

The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor

The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme

Contact Info

Product

Resources

About