The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector

Chen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting‐Chang; Shih, Chih‐Cheng; Tseng, Yi-Ting; Zheng, Haimei; Chen, Ying‐Chen; Chang, Yao‐Feng; Lin, Chun-Chu; Huang, Hui‐Chun; Huang, Wei‐Chen; Wang, Hao; Sze, Simon M.

doi:10.1109/ted.2018.2862917

Cited by 32 publications

(21 citation statements)

References 23 publications

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“…Furthermore, there is a movement of vanadium and oxygen ions to form a low resistive path as can be seen in Figure 5 and Table 2. [11,28] The switching mechanism for volatile TS is summarized in Figure 6. [11,28] The switching mechanism for volatile TS is summarized in Figure 6.…”

Section: Forming and Switching Mechanismmentioning

confidence: 99%

“…Observed electroforming curve in Figure 2a when combined with the above conclusions strongly suggests filamentary breakdown [23][24][25][26][27] associated with the electroforming curve, which has also been supported by other studies on the resistive switching properties of vanadium oxide. [18,28] After formation of c-VO 2 islands, device now switches due to IMT of local c-VO 2 islands. In step 1, an initial electroforming curve suggests a filamentary dielectric breakdown.…”

Section: Forming and Switching Mechanismmentioning

confidence: 99%

“…C. Chen et al [18,28] present that the TS in a-VO x is an entangled result of the electron injection driven Mott transition and IMT in VO 2 due to electrical-thermal interaction in the filament. C. Chen et al [18,28] present that the TS in a-VO x is an entangled result of the electron injection driven Mott transition and IMT in VO 2 due to electrical-thermal interaction in the filament.…”

Section: Forming and Switching Mechanismmentioning

confidence: 99%

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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Nirantar

Mayes

Rahman

et al. 2019

Adv Elect Materials

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structure due to its ability to be designed in high capacity 3D crossbar arrays. [1] The major disadvantage of 3D crossbars currently is the high-leakage or sneak-path current. [2] Complex class of vanadium oxide spans a broad range of 20 phases. [3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS). [11][12][13] Apolar TS property in the above papers is desirable as a selector element in crossbar arrays to reduce the sneak-path current (which disrupts stored data). Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector. For this reason, a few recent studies [10,[14][15][16] demonstrated TS based on amorphous vanadium oxide (a-VO x ). However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, [17] which is not desirable for the practical application. This variability highlights that nanostructural investigations are needed to understand the origins of different memory behaviors, in particular the reasons for observing volatile and apolar TS in a-VO x films for its practical utilization as a selector element. Further, in-depth electrical characterization is required to ascertain the electrical conditions for the occurrence of volatile or non-volatile switching in the single device.Here, we present asymmetric cross-point device (Pt/Ti/a-VO x /Pt) with ≈100 nm a-VO x film as a functional switching layer which shows multifunctional behavior in a single device. We further introduce a fabrication procedure (Section S1, Supporting Information) to incorporate a-VO x in crossbar architecture, which has been found to dissolve in water. We choose amorphous films because crystalline films are porous due to grain boundaries and pin-holes, [11] which is unsuitable for stacked architectures. Through X-ray photoelectron spectroscopy (XPS) we analyze the stoichiometry of as-deposited film which revealed the mixed-phased oxidation, including V 3+ , V 4+ , and V 5+ (corresponding to V 2 O 3 , VO 2 , and V 2 O 5 , respectively).

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Section: Forming and Switching Mechanismmentioning

confidence: 99%

Section: Forming and Switching Mechanismmentioning

confidence: 99%

Section: Forming and Switching Mechanismmentioning

confidence: 99%

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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Nirantar

Mayes

Rahman

et al. 2019

Adv Elect Materials

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“…The selector is assembled in series with the memristive device. Different types of selectors have been experimentally demonstrated in [27][28][29][30]. The 1S-1R is area-efficient, but suffers from sneak-path problem because it is not possible to program (read or write to a cell) a cell without interfering with its neighbours [22].…”

Section: Memristive Logicmentioning

confidence: 99%

Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing

Reuben

2020

JLPEA

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As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing systems (‘von Neumann bottleneck’ or ‘memory wall’) necessitates a paradigm shift in the way data is processed. Emerging resistance switching memories (memristors) show promising signs to overcome the ‘memory wall’ by enabling computation in the memory array. Majority logic is a type of Boolean logic which has been found to be an efficient logic primitive due to its expressive power. In this review, the efficiency of majority logic is analyzed from the perspective of in-memory computing. Recently reported methods to implement majority gate in Resistive RAM array are reviewed and compared. Conventional CMOS implementation accommodated heterogeneity of logic gates (NAND, NOR, XOR) while in-memory implementation usually accommodates homogeneity of gates (only IMPLY or only NAND or only MAJORITY). In view of this, memristive logic families which can implement MAJORITY gate and NOT (to make it functionally complete) are to be favored for in-memory computing. One-bit full adders implemented in memory array using different logic primitives are compared and the efficiency of majority-based implementation is underscored. To investigate if the efficiency of majority-based implementation extends to n-bit adders, eight-bit adders implemented in memory array using different logic primitives are compared. Parallel-prefix adders implemented in majority logic can reduce latency of in-memory adders by 50–70% when compared to IMPLY, NAND, NOR and other similar logic primitives.

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“…Recently, there has been an increased interest in developing high energy efficiency electronic switches using transition metal dichalcogenides [8] and IMT materials [9,10]. The grain size in polycrystalline VO 2 affects the IMT temperature as discussed in [11].…”

Section: Introductionmentioning

confidence: 99%

Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope

Tabib-Azar¹,

Likhite²

2019

Electronics

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The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO2 (NP-VO2) using the electric field effect in a metal-oxide-VO2 field-effect transistor (MOVFET) at room temperature was investigated for the first time. The IMT induced by current in NP-VO2 is a function of nano-particle size and was studied first using the conducting atomic force microscope (cAFM) current-voltage (I-V) measurements. NP-VO2 switching threshold voltage (VT), leakage current (Ileakage), and the sub-threshold slope of their conductivity (Sc) were all determined. The cAFM data had a large scatter. However, VT increased as a function of particle height (h) approximately as VT(V) = 0.034 h, while Ileakage decreased as a function of h approximately as Ileakage (A) = 3.4 × 10−8e−h/9.1. Thus, an asymptotic leakage current of 34 nA at zero particle size and a tunneling (carrier) decay constant of ~9.1 nm were determined. Sc increased as a function of h approximately as Sc (mV/decade) = 2.1 × 10−3eh/6 and was around 0.6 mV/decade at h~34 nm. MOVFETs composed of Pt drain, source and gate electrodes, HfO2 gate oxide, and NP-VO2 channels were then fabricated and showed gate voltage dependent drain-source switching voltage and current (IDS). The subthreshold slope (St) of drain-source current (IDS) varied from 42 mV/decade at VG = −5 V to 54 mV/decade at VG = +5 V.

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The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector

Cited by 32 publications

References 23 publications

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing

Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope

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The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector

Cited by 32 publications

References 23 publications

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars

Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing

Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope

Contact Info

Product

Resources

About

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars