The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance

Kurdoghlian, A.; Win, C.S.; Yarn, W.; Chen, Jing; Hu, Ming; Pao, C.K.; Bosch, D.

doi:10.1109/mcs.1993.247468

Cited by 5 publications

(1 citation statement)

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“…Tsemg et al demonstrated a GaAsbased HEMT MMIC power amplifier with 40% power-added efficiency and 27-dBm output power at 30 GHz [ 11. Kurdoghlian et al developed a HEMT amplifier with 32% power-added efficiency and 27-dBm output power at 35 GHz [2]. Hegazi et al demonstrated a MESFET amplifier with 15% poweradded efficiency and 22.5-dBm output power at 43 GHz [3].…”

Section: Introductionmentioning

confidence: 99%

High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications

Lam¹,

Matloubian

Kurdoghlian³

et al. 1993

IEEE Microw. Guid. Wave Lett.

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Abstruct-Advanced millimeter-wave systems require highefficiency MMIC power amplifiers to reduce physical size, weight, and prime power consumption. A high-efficiency MMIC power amplifier was developed using 0.15 um InP-based (Alo.rxIno jzAs/Gao 47 Ino,js As) HEMT MMIC technology. The amplifier demonstrated state-of-the-art power performance, including 33% power-added efficiency and 24 dBm output power at 44 GHz. Potential applications include communication terminals and phased array antennas.

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Section: Introductionmentioning

confidence: 99%