The deposition and film properties of reactively sputtered titanium nitride

Investigation of electrical and optical properties of low temperature titanium nitride grown by rf-magnetron sputtering

“…Thus a high concentration of gas molecules prevents sputtered particles of titanium, nitrogen and titanium nitride from settling to the surface of the sample. The growth rate of TiN on Si may reach maximum saturation at low N 2 concentration [4]. In this study, it was not observed.…”

“…252 nm thick film has a resistivity 23.6 µOm cm that corresponds to the thicker TiN coatings [3]. First of all the resistivity depends on stoichiometry, which differ for various N 2 /Ar ratio value [4], and on film thickness [5]. Actually, resistivity of 100-120 nm thin film 4 times more than 250-300 nm TiN film.…”

“…The resulting films have flat surface with a metallic luster. TiN stoichiometry depends on N 2 concentration [4], therefore there is a difference in the structure of the two samples. Morphological studies showed the presence in films of nanoscale structures with a particle size of 16-38 nm.…”

“…Most scientific articles reports dc-magnetron sputtering at 300-400 0 C [3][4][5] or rf-reactive magnetron sputtering in 100% nitrogen atmosphere [6]. Heating up to 600 0 C is used for obtain good stoichiometry of TiN.…”

Electromigration in Titanium Doped Aluminum Alloys

“…Underlaying the Al with Ti caused an increase in lifetime. However, failure in dll cases was due to a short rather than an open circuit [10]. Figure 6 is a graph of the electrical resistivity (p) as a function of the film composition.…”