Electromigration in Titanium Doped Aluminum Alloys

Towner, Janet M.; Dirks, Albertus C.; Tien, Tien

doi:10.1109/irps.1986.362104

Cited by 9 publications

(2 citation statements)

References 4 publications

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“…5, it has been reported that for small concentrations of Ti doping, electromigration lifetime of Al films is improved dramatically by about two orders of magnitude. But the Ti doping effect on electromigration lifetime turns around and becomes detrimental when the Ti concentration is further increased above a limit at around 0.8 wt%.…”

Section: Discussionmentioning

confidence: 99%

<title>Effect of heat treatments on electromigration performance for TiN/AlCu/TiN interconnect</title>

Ting

Hong

1994

SPIE Proceedings

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The thermal stability of multilayered TiN/AICu/TiN interconnect metallization and its impact on electromigration reliabifity performance has been investigated. Upon heat treatments at 450°C, a monotonic increase in sheet resistance of the metal structure was observed. The test results on samples with different structures, including single-layered A1Cu, AICu/TiN(cap), TiN(bottom)/A1Cu and TiN(bottom)/A1CuIFiN(cap), showed that the sheet resistance increase due to heat treatment effect occurred only for the last two structures which had a TiN barrier. This indicates that the observed sheet resistance increase resulted from occurrence of some intermetallic reactions between AlCu and the underlying TiN barrier, but similar reactions did not occur between A1Cu and the TiN in the capping layer. The result was further verified by cross sectional ThM and RBS analysis on samples with heat treatments. The heat treatment effect on electromigration performance was found to be significant leading to lifetime variations over an order of magnitude. A bell-shaped relationship between electromigration lifetime and the metal sheet resistance was found on samples receiving varying cycles of heat treatments. The observed effect is believed to be due to doping effect of Ti diffusing from the underlying TiN barrier into A1Cu. It is concluded that a good control over the cumulative thermal budget is essential to assure electromigration reliability for TiN/A1CuITiN metallizations, which is especially critical for multilevel metallizations.

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Section: Discussionmentioning

confidence: 99%

<title>Effect of heat treatments on electromigration performance for TiN/AlCu/TiN interconnect</title>

Ting

Hong

1994

SPIE Proceedings

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“…Furthermore, the Ti can diffuse into Al as detected using the RBS measurement, and since Ti is one of the impurities in Al that can enhance its EM lifetime (Fischer and Neppl 1984 Towner, Dirks and Tien 1986;Hosoda, Yagi and Tsuchikawa 1989), the lifetime of TiN/Ti/Al is found to be significantly larger than TiN/Al.…”

Section: Number Of Metallization Levelsmentioning

confidence: 99%