The Deposition of Silicon Dioxide Films at Reduced Pressure

Adams, Allan; Capio, C. D.

doi:10.1149/1.2129171

Cited by 134 publications

(60 citation statements)

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“…Huppertz and Engl (7) modeled the SiO2 deposition from TEOS but neglected the convective mass transport. Moreover, their kinetic model does not agree well with published data in the literature (3,4). Recently Desu (8) has shown that in the kinetics of TEOS, gas-phase decomposition is the rate controlling step.…”

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confidence: 85%

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Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Kalidindi

Desu

1990

J. Electrochem. Soc.

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A theoretical model utilizing finite element methods is proposed to analyze low pressure chemical vapor deposition of SiO2 by pyrolysis of tetraethoxysilane (TEOS). This model incorporates both the homogeneous gas-phase reactions and the heterogeneous surface processes. The predicted values from the proposed model agreed very well with the experimental results. Besides accurately predicting the experimental data we have also estimated the forward and backward reaction rate constants for the gas-phase equilibrium reaction of TEOS.There is a growing interest in the chemical vapor deposition of oxides using metal alkoxides (1) due to process simplicity and other advantages such as: (i) relatively low temperatures of deposition to obtain high density films, (it) kinetically controlled deposition over a wide range of process parameters, which enables good step coverage and good uniformity, (iii) the process does not require addition of oxygen gas to yield stoichiometric oxides, due to the fact that more than required amount of oxygen is already present in reagent, (iv) fairly safe and less explosive reagents, and (iv) lack of need for special configuration for substrate positioning in the reactor, such as caged boats.The traditional process of silane oxidation for depositing SiO2 films in the VLSI process technology is therefore being rapidly replaced by the process of pyrolysis of tetraethoxysilane (alkoxide of silicon). There have been a number of experimental studies on the deposition of SiO2 from TEOS (2-8). It has been shown repeatedly that high quality SiO= films can be obtained from this process.In spite of the large amount of published data, very little is known about the kinetic mechanism of TEOS. Moreover, there are no theoretical models presented in the literature which take into account the kinetics, convective and diffusive mass transport in analyzing the deposition. Huppertz and Engl (7) modeled the SiO2 deposition from TEOS but neglected the convective mass transport. Moreover, their kinetic model does not agree well with published data in the literature (3, 4). Recently Desu (8) has shown that in the kinetics of TEOS, gas-phase decomposition is the rate controlling step.According to this kinetic model TEOS decomposes in the gas phase as Kg Si(C2H50)4 < =~ I + R1 [1] where I and R~ represent the intermediate and the organic by-product, respectively. The formed intermediate (I) then adsorbs to a vacant surface site (*) on the silicon surface Ko I + * ~ I* [2] The adsorbed intermediate (I*) migrates on the substrate surface to a reaction site and decomposes to SiO2 and an organic by-product (R2) kd I* ~ SiO2 + R2 + * [3] Let Kg and K, denote the equilibrium constants for the reactions [1] and [2]. Note that the equilibrium constant is the ratio of forward reaction rate constant to backward reaction rate constant. Let k, denote the rate constant for reaction [3]. The reactions [1]-[3] could be lumped into a singlerate equation for the deposition rate of SiO2 and is given as (8) Deposition rate = kdKa(KgCtg...

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confidence: 85%

“…There have been a number of experimental studies on the deposition of SiO2 from TEOS (2)(3)(4)(5)(6)(7)(8). It has been shown repeatedly that high quality SiO= films can be obtained from this process.…”

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confidence: 99%

Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Kalidindi

Desu

1990

J. Electrochem. Soc.

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“…TEOS pyrolysis has been utilized for a long time to deposit rather conformal oxide 5,9,10 at high temperatures such as 700°C. The higher deposition temperature regime is not suitable for interlayer dielectric applications.…”

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confidence: 99%

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Shareef¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Therefore, C 60 is usually deposited onto a thermally oxidized tunneling oxide O. Senftleben et al/C 60 Nanostructures for Applications and is then covered by deposition of a control oxide on top. This can either be done by PECVD [22,23] , by CVD growth of amorphous silicon and subsequent thermal oxidation [24,25] , by co-evaporation of silicon in an oxygen ambient [26,27] or by a low pressure chemical vapor deoposition (LPCVD) process using, e.g., tetraetoxysilane (TEOS) as a precursor [28,29] , which requires a high thermal budget of around 700 8C. The stability and the desorption behavior of C 60 in oxygen atmosphere under elevated temperatures is, therefore, of high interest.…”

Section: Inside An Amorphous Silicon Dioxide Matrixmentioning

confidence: 99%

C₆₀ Nanostructures for Applications in Information Technology

et al. 2009

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Carbon nanostructures—such as nanotubes, fullerenes, or graphene sheets—are studied widely in search of future applications in electronic devices. In our work, we demonstrate the possibility of embedding C60 fullerene molecules into a crystalline silicon matrix to form highly confined carbon‐δ‐layers as well as into an amorphous SiO2 gate stack for possible application as a charge storage device.

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The Deposition of Silicon Dioxide Films at Reduced Pressure

Cited by 134 publications

References 1 publication

Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

C₆₀ Nanostructures for Applications in Information Technology

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The Deposition of Silicon Dioxide Films at Reduced Pressure

Cited by 134 publications

References 1 publication

Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

C60 Nanostructures for Applications in Information Technology

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C₆₀ Nanostructures for Applications in Information Technology