The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Bae, Hyeon Seok; Kwon, Jung Hwan; Chang, Sung Ok; Chung, Myung Ho; Oh, Tae Yeon; Park, Jung Ho; Lee, Sang Yeol; Pak, James Jungho; Ju, Byeong Kwon

doi:10.1016/j.tsf.2010.02.073

Cited by 41 publications

(23 citation statements)

References 23 publications

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…In order to successfully fabricate these IGZO TFTs, a thermal recovery process above 300°C is required. This process is known to improve the TFT performance through the recovery or rearrangement of the ionic bonding structures [3], [4]. However, during this thermal recovery step, metal atoms diffuse from source/drain (S/D) electrodes into the IGZO channel, thereby increasing the conductivity of IGZO through oxidation of the diffused metal atoms and de-oxidation of In 2 O 3 [5].…”

Section: Introductionmentioning

confidence: 99%

Impacts of the Thermal Recovery Process on In–Ga–Zn–O (IGZO) TFTs

Choi

Lim

Jung

et al. 2014

IEEE Electron Device Lett.

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In this letter, we investigate the impact of the thermal recovery (annealing) process on the electrical characteristics and the stability of IGZO TFTs in terms of: 1) vertical/lateral diffusion of Ti atoms into the IGZO channel region from the source/drain electrode and 2) recovery or local rearrangement of ions in IGZO. Although low thermal recovery temperatures <300°C are required to avoid the Ti diffusion that degrades IGZO TFT electrical characteristics, the TFT devices fabricated below 300°C becomes very unstable in gate/drain electricalstresses as a tradeoff.Index Terms-IGZO, TFT, stability, short channel effect, Ti diffusion, and gate/drain-stress.

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“…After PTP treatment, IGZO surface remained smoothly and it indicates IGZO film maintained an amorphous phase. If the IGZO thin film is crystallized after PTP, the surface roughness should be increased resulting from grains forming [23]. To investigate whether nanocrystalline is formed or not, transmission electron microscopy (TEM) analyses will be performed.…”

Section: Resultsmentioning

confidence: 99%

Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

Noh

Joshi

Kuruganti

et al. 2015

IEEE J. Electron Devices Soc.

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Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 µm) arc lamp radiation spectrum with 100 pulses of 1 m pulse width. With power density of 3.95 kW/cm 2 and 0.1 s total irradiation time, the PTP treated IGZO TFTs showed comparable or improved switching and bias stability properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility µFE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm 2 /V·s, 8.1 V, and 0.22 V/decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.INDEX TERMS Thin film transistors, thin film, pulse thermal annealing.

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The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Cited by 41 publications

References 23 publications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Impacts of the Thermal Recovery Process on In–Ga–Zn–O (IGZO) TFTs

Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

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