The effect of annealing temperature and Al dopant on characterization of ZnO thin films prepared by sol-gel method

Sabeeh, Sabah H.; Jassam, Ruaa Hashim

doi:10.1016/j.rinp.2018.05.033

Cited by 43 publications

(17 citation statements)

References 11 publications

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“…optical band gap shows a reverse relationship with annealing temperature. Many author reports that annealing process improves the crystallinity and increases average grain size of the films that results in decreasing defects concentration as well as reduce the strain in the films; therefore, the optical band gap energy decreases [17,22]. The band gap of the AZO film annealed at 500°C was found to increases, this tendency may occur due to the oxide formation into the films at this elevated temperature.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Besides, the density of the microstructure of the films increases with the increase of annealing temperature. Sabeeh et al [17] reported that the density of AZO films increases with annealing temperature. However due to annealing at higher temperature, the grain boundaries got sufficient energy and merge with each other forming a bigger grain.…”

Section: Surface Morphology (Sem)mentioning

confidence: 99%

“…So, the transmittance values of the films have been found to increase with annealing temperature up to 450°C and then decreases afterwards. Many authors report that the increase in transmittance of the films obtained by annealing is related to an increase in crystallinity of the films and the improvement of crystallinity leads to decrease in optical scattering and defects [5,6,13,17]. Besides, the decrement behavior of transmittance obtained at annealing temperature 500°C may be due to the oxide formation into the films.…”

Section: Optical Propertiesmentioning

confidence: 99%

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Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

et al. 2019

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Aluminium doped zinc oxide (AZO) thin films were prepared on glass substrate by spray pyrolysis technique and subsequently their structural, morphological and optical properties were investigated and analyzed as a function of annealing temperature. The films were deposited at 350°C and were annealed at temperature 350, 400, 450 and 500°C. X-ray diffraction (XRD) analysis confirms that both deposited and annealed films are polycrystalline in nature and have hexagonal wurtzite structure. The crystalline size as well as the crystalline quality of the film was found to increase with the increase of annealing temperature to a certain point. However, the dislocation density and the compressive stress induced in as-deposited AZO films reduce with annealing temperature. SEM image reveals that the deposited film has nanorope like morphology. The average diameter of the rope and the density of the morphology increases with the increase of annealing temperature. As the annealing temperature increases from 350°C to 450°C, the average transmittance of the films increases and the band gap value decreases from 3.25 eV to 3.17 eV. In addition, obtained results also show that urbach energy, extinction coefficient, refractive index, optical conductivity has changes noticeably with annealing temperature.

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Section: Optical Propertiesmentioning

confidence: 99%

Section: Surface Morphology (Sem)mentioning

confidence: 99%

Section: Optical Propertiesmentioning

confidence: 99%

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Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

et al. 2019

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“…It was found that the grain size decreased with an increase in the aluminum concentration, which is similar to other results. [7,15,16,[32][33][34][35][36][37]…”

Section: Crystallite Size Estimationmentioning

confidence: 99%

“…The increase in the energy band gap due to Moss-Burstein effect, after doping the free carrier concentration increased and the Fermi level shifted to a higher energy state into the conduction band, leading to optical band gap widening as it has been found in the AZO thin films grown by other methods. [7,11,12,13,[15][16][17]19,28,30,[32][33][34][38][39][40][41][42][43][44][45][46][47][48][49][50][51]…”

Section: The Band Gapmentioning

confidence: 99%

Growth of Aluminum Doped Zinc Oxide Nanostructure Thin Films by Nonconventional Sol‐Gel Method

Alrefaee

Singh

Das

2022

Macromolecular Symposia

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The present work demonstrates the growth of undoped and Al doped ZnO (AZO) thin films by using nonconventional sol-gel method. The structural, morphological, optical, and electrical properties of obtained thin films are studied. X-ray diffraction (XRD) analysis confirms hexagonal wurtzite structures for both undoped and doped thin films. The crystallite size is found between 15 and 30 nm. Scanning electron microscope (SEM) images show that the films have approximately uniform morphologies, consisting in several flower-like aggregates with nanosized multipetals. From the optical properties, it is found that with the increase in the doping concentration, there is a decrease in the absorption coefficient in the visible wavelength range. It is also noticed that the increase in doping concentration causes an increase in bandgap (E g ) and a decrease in extinction coefficient. Urbach energy decreases with increase in the doping concentration. In the Hall effect study, it is observed that the conductivity and carrier concentration increase sharply with increasing the aluminum quantity. The causes and significance of these observations are discussed.

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Solution‐Processed‐ZnO‐Mediated Semiconductor Bonding with High Mechanical Stability, Electrical Conductivity, Optical Transparency, and Roughness Tolerance

Yamashita

Hirata

Inoue

et al. 2019

Adv Materials Inter

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Semiconductor bonding mediated by a transparent conductive oxide, ZnO, prepared by a simple solution spin‐on process, is presented. The ZnO synthesis, sintering, and bonding processes are realized in a single step, thus providing a highly efficient semiconductor bonding method. The ZnO‐mediated bonds simultaneously exhibit high mechanical stability, electrical conductivity, and optical transparency. The bonding's high tolerance for the roughness of the surfaces to be bonded is also demonstrated, due to the soft, deformable interfacial contact agent that is solidified in the bonding process, in contrast to direct bonding and bonding mediated by solid‐state materials. Furthermore, the fabrication and operation of solar‐cell devices are demonstrated using the developed ZnO‐mediated bonding technique, with current paths across the bonded interfaces, thus verifying the practical applicability of the bonding scheme. The developed ZnO‐mediated bonding scheme leads to low‐cost, high‐performance heterostructured optoelectronic device fabrication and integration.

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The effect of annealing temperature and Al dopant on characterization of ZnO thin films prepared by sol-gel method

Cited by 43 publications

References 11 publications

Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

Growth of Aluminum Doped Zinc Oxide Nanostructure Thin Films by Nonconventional Sol‐Gel Method

Solution‐Processed‐ZnO‐Mediated Semiconductor Bonding with High Mechanical Stability, Electrical Conductivity, Optical Transparency, and Roughness Tolerance

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