The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy

Yu, Zhonghai; Buczkowski, S. L.; Giles, N. C.; Myers, T. H.; Richards‐Babb, Michelle

doi:10.1063/1.117693

Cited by 80 publications

(37 citation statements)

References 10 publications

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“…We find in the present work that, for relatively low pressure of H, this transition persists but the critical Ga flux at which it occurs increases as the H pressure increases. We argue, following the work of Yu et al and Van Mil et al [5,6], that the H is modifying the gas phase or surface adsorption kinetics and producing more active N for the GaN growth. For larger H pressures and under Ga-poor conditions we observe a new surface structure, appearing as a sharp 2 × 2 pattern in reflection high-energy electron diffraction (RHEED).…”

Section: Introductionmentioning

confidence: 60%

“…Surface studies for MOCVD films also exist [4]. Studies [5,6] have been carried out focusing on the dependence of growth rate of GaN films (of both polarities) in the presence of H. Theoretical work has also been performed to investigate the effect of H on GaN growth [7,8]. In this work, we study the GaN(0001) surface structure in the presence of H, in an effort to improve understanding of the link between MOCVD/RMBE and PAMBE growth.…”

Section: Introductionmentioning

confidence: 99%

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Effects of hydrogen during molecular beam epitaxy of GaN

Yang

Feenstra

2005

phys. stat. sol. (c)

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Section: Introductionmentioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Effects of hydrogen during molecular beam epitaxy of GaN

Yang

Feenstra

2005

phys. stat. sol. (c)

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“…3͑b͒ was measured at region 2 and shows a very sharp peak to the blue of the main emission line ͑exciton bound to a neutral donor, D 0 X͒ at 3.47 eV. 13,14 This sharp peak is at 3.53 eV ͑Ref. 15͒ and originates from the GaN quantum disks ͑3 nm thickness͒ and has a full width at half maximum ͑FWHM͒ of 2.17 meV at 4.2 K. It is rather obvious from Fig.…”

mentioning

confidence: 94%

“…3͑c͒ that the strong emission seen at 3.47 eV originates from a region of pure GaN at the tip of the nanorod, where the optical quality of the hexagonal nanorod is superior to that seen in the base region. 13 The sharp quantum disk peak at 3.53 eV ͓Fig. 3͑b͔͒ was investigated further by measuring the temperature dependent photoluminescence.…”

mentioning

confidence: 99%

Photoluminescence properties of a single GaN nanorod with GaN∕AlGaN multilayer quantum disks

Lee

et al. 2007

Applied Physics Letters

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Photoluminescence (PL) properties of a single nanorod containing multiple GaN quantum disks separated by AlGaN potential barriers are investigated using micro-PL spectroscopy. Previous studies reported ensemble spectra from many nanorods. The PL spectra show different features depending on the region of the nanorod excited by the laser, including a sharp feature originating from the quantum disk region. The distinct differences between the PL from the different regions are discussed. The results imply that excitons are strongly confined in the quantum disks, and the authors suggest that small quantum disks can be regarded as quantum dots having a discrete density of states.

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“…Finally, the influence of hydrogen on group-III nitride growth is of a great variety. It is learned that hydrogen can enhance liquid droplet formation [19], influence the growth rate of semiconductor [23], and change the solid composition of ternary compounds [24]. In addition, the observed difficulties in p-doping of group-III nitrides by Mg are commonly attributed to the effect of hydrogen formed during the growth process [1].…”

Section: Introductionmentioning

confidence: 99%

The role of gaseous species in group-III nitride growth

Karpov¹,

Makarov

Ramm

1997

MRS Internet j. nitride semicond. res.

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A quasi-thermodynamic model accounting for kinetics of molecular nitrogen evaporation is applied to simulate the growth of binary and ternary group-III nitrides using atomic group-III elements and molecular ammonia as the sources. The values of the molecular nitrogen evaporation coefficients from the surface of GaN and AlN necessary for the simulation are extracted from experiments on free evaporation of the crystals in vacuum, while for InN only estimates are available. The growth process of AlN and InN is studied by analyzing the composition of the desorbed vapor species that are thought to influence the native defect formation in group-III nitrides. Different channels of desorption from the surfaces of group-III nitrides (related either to group-III atoms or to their hydrides) are compared. Specific features of the growth processes under the metal-rich and N-rich conditions are analyzed. The developed approach is extended to study the growth of the ternary compounds GaInN and AlGaN. The growth rate of ternary compounds versus temperature shows a two-drop behavior corresponding to the rapid increase of the respective group-III atom desorption. The effect is accompanied by a corresponding stepwise change in the solid phase composition. Factors retarding the growth of ternary compounds -the miscibility gap related to internal strain accumulated in the solid phase due to the lattice mismatch of binary constituents, and the extra liquid phase formation during growth -are discussed with respect to GaInN.

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The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy

Cited by 80 publications

References 10 publications

Effects of hydrogen during molecular beam epitaxy of GaN

Effects of hydrogen during molecular beam epitaxy of GaN

Photoluminescence properties of a single GaN nanorod with GaN∕AlGaN multilayer quantum disks

The role of gaseous species in group-III nitride growth

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