The effect of electrodes on microstructures and switching behaviors of ZnO-based resistive memory

Jiang, Zhiyi; Zhang, Wei; Bao, Jianqiu; Cheng, Hongbo; Zhang, Xuehua; Hu, Fangren

doi:10.1016/j.ceramint.2020.06.267

Cited by 11 publications

(6 citation statements)

References 32 publications

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“…Compared to the RM of the N 2 -annealed RRAM cell, it is found that the H 2 -annealed RRAM cell can more safely protect stored data than the N 2 -annealed RRAM cell from sneak current. To identify the current conduction mechanism of both N 2 -and H 2 -annealed RRAM cells in detail, the I-V curves were re-plotted with several current conduction mechanisms such as Schottky Emission (SE), Poole-Frenkel (P-F) Emission, Space Charge Limited Conduction (SCLC), Fowler-Nordheim tunneling (FNT) and direct tunneling (DT), and trap-assisted tunneling (TAT) [46]- [49].…”

Section: Resultsmentioning

confidence: 99%

Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation

et al. 2022

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Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current level closely related to device's degradation, we applied a hydrogen passivation to Zr 3 N 2 based RRAM devices and investigated the correlation between current level and trap density, such as an interface trap density (N it ) at the Zr 3 N 2 /p-Si layer and nitride trap density (N nt ) within Zr 3 N 2 films, for memory cells annealed in conventional N 2 gas as well as H 2 gas. Compared to the N 2 -annealed sample, after H 2 annealing, N it is lowered by the hydrogen passivation effect, which results in a reduction of both current level at high resistive state (HRS) and variation of HRS and low resistive state (LRS). As a result, in the H 2 annealed Zr 3 N 2 RRAM cell, we observed a lower operation voltage/current, longer endurance, and larger read margin due to the hydrogen passivation effect.INDEX TERMS Hydrogen passivation, rapid thermal annealing, resistive switching, self-rectifying, Zr 3 N 2 , nitride trap density, interface trap density.

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Section: Resultsmentioning

confidence: 99%

Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation

et al. 2022

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“…The resistive switching direction for the Si substrate (figure 1(c)) was opposite to those for the other two substrates, possibly because the active interfaces for the three structures are different [18,19]. The device with the Cu bottom electrode displayed the best performance, including in terms of the ON/OFF ratio and set/reset voltage, which was likely due to the better crystallization quality of ZnS films on Cu substrate [20][21][22]. The curve fittings of the conduction data of the three structures are presented in figure S1 in the supporting information.…”

Section: Resultsmentioning

confidence: 97%

Electrically erasable writing properties of ZnS films by conductive atomic force microscopy

Wang

Liang

et al. 2023

J. Phys. D: Appl. Phys.

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Resistive switching cycles were realized in Au/ZnS/substrate (indium–tin oxide (ITO), Cu, Si) structures, and electrically erasable writing operations were achieved in the Au/ZnS/Si structure using conductive atomic force microcopy. High-resolution transmission electron microscopy revealed that high resistance state (HRS) was a mixture of amorphous and nanocrystalline state, while the frequency response of alternating current conductivity indicated that the low resistance state (LRS) was only nanocrystalline. Electric field and thermal effects contributed to the distribution of conductive defects in the ZnS film, and nearest-neighbor hopping conduction controlled the electrical resistance of the Au/ZnS/ITO structure. X-ray photoemission spectroscopy analysis of conductive defects of ZnS films in the LRS revealed that they were zinc-rich or sulfur-poor. This study confirms the intrinsic resistive switching characteristic of ZnS films, which can serve as nonoxide materials for nonvolatile memory application.

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“…A slope value of 1 corresponds to Ohm’s law, whereas a slope value of 2 represents charge conduction based on electron-injected trap-controlled SCLC theory governed by Child’s law. On the other hand, for a slope value greater than 2, charge conduction is reported to be due to the trap-filled SCLC theory; i.e., with the increase in voltage, the trap centers are occupied by charge carriers following Child’s law ( I ∼ V 2 ) for charge conduction. , …”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, for a slope value greater than 2, charge conduction is reported to be due to the trap-filled SCLC theory; i.e., with the increase in voltage, the trap centers are occupied by charge carriers following Child's law (I ∼ V 2 ) for charge conduction. 72,73 For both positive (Figure 5a) and negative biases (Figure 5b), the log I vs log V plot of the IC-based memory device reveals the presence of four distinct regions (R 1 , R 2 , R 3 , and R 4 ), indicating that the conduction process in the IC active layer may be dominated by different conduction processes. In the R 1 region with a unity slope at the low bias of HRS, the I− V relationship is linear.…”

Section: Electrical Characterizationsmentioning

confidence: 99%

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Rahman

Deb

Sarkar

et al. 2023

ACS Appl. Electron. Mater.

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Development of biocompatible and biodegradable information storage could be one of the major strides toward the advancement of the next-generation eco-friendly electronics. Locally available leaves of Ipomoea carnea (IC) are employed to design a nonvolatile resistive memory device having the configuration Au/IC/ITO. The IC-based memory device is found to have back-to-back Schottky behavior. The memory device exhibits a very good ON/OFF ratio (∼102), device yield (78%), reproducibility (≈32 cycles), and good physical stability (>360 days). Upon UV irradiation, the device performance improves in terms of a higher device yield (82%) and a larger memory window (104). Space charge-limited conduction, Schottky emission (SE), and metallic filament formation were the key behind the conduction mechanism for such observed switching behavior. Atomic force microscopy measurements have also been carried out in order to visualize the conduction filament in the IC-based resistive device. Temperature-dependent investigations confirmed that the gold filament and oxygen vacancy filament play an important role in the conduction mechanism. Based on the I–V characteristics as well as the data storage nature, it has been proposed that IC-based switching devices may be utilized to design rewritable read-only memory devices. This is an improvement of conventional write-once-read-many memory.

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The effect of electrodes on microstructures and switching behaviors of ZnO-based resistive memory

Cited by 11 publications

References 32 publications

Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation

Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation

Electrically erasable writing properties of ZnS films by conductive atomic force microscopy

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

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The effect of electrodes on microstructures and switching behaviors of ZnO-based resistive memory

Cited by 11 publications

References 32 publications

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

Electrically erasable writing properties of ZnS films by conductive atomic force microscopy

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

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Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation

Improved Resistive Switching Observed in Ti/Zr₃N₂/p-Si Capacitor via Hydrogen Passivation