The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

Wilson, Richard Ashby; Simion, Cristian E.; Blackman, Christopher S.; Carmalt, Claire J.; Stănoiu, Adelina; Maggio, Francesco; Covington, James A.

doi:10.3390/s18030735

Cited by 60 publications

(38 citation statements)

References 33 publications

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“…Yield Thin lm synthesis CVD of nickel oxide thin lms were performed using a ow-type, cold-walled reactor described previously. 25 The reactor was programmed using a custom IGI Systems Lab Interface Input control box which automatically controls all temperatures and heating systems, gas ow rates and solenoid valves. CVD experiments were carried out using [Ni(dmamp 0 ) 2 ].…”

Section: Precursor Analysismentioning

confidence: 99%

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

et al. 2021

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Section: Precursor Analysismentioning

confidence: 99%

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

et al. 2021

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“…According to our previous study [26], a metal precursor vapor pressure higher than 0.13 Torr would generate enough metal precursor vapor in our reactor for one pulse. Therefore, a temperature above 115 °C would provide sufficient vapor pressure.…”

Section: Resultsmentioning

confidence: 99%

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

et al. 2019

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An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of Al2O3 via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited Al2O3 films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting.

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“…The response of the sensor is varied by changing the temperature of the film from 62 to 228 C. d) Adapted under the terms of a CC-BY license. [126] Copyright 2018, The authors, published by MDPI. e-h) Adapted under the terms of a CC-BY license.…”

Section: Electronic Conductors: Metal Oxidementioning

confidence: 99%

Optoelectronic Gas Sensing Platforms: From Metal Oxide Lambda Sensors to Nanophotonic Metamaterials

Perkins

Gholipour

2021

Advanced Photonics Research

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Gas sensing technology platforms have allowed for the improvement of crucial industrial processes and the decreased emissions of environmentally harmful gases that have led to deleterious outcomes. Industries where gas control has become critical are petrochemical, refinery, food and beverage, and power generation. These industries utilize gases such as ethylene, sulfur, carbon dioxide (CO 2 ), and oxygen (O 2 ) to produce gasoline, carbonated beverages, and electricity. [1] During various processes, harmful gases such as carbon monoxide (CO), CO 2 , sulfur dioxide (SO 2 ), and nitrogen dioxide (NO 2 ) and volatile organic compounds (VOCs) such as ethanol (C 2 H 5 OH), acetone (CH 3 COCH 3 ), toluene (C 7 H 8 ), and acetylene (C 2 H 2 ) can be emitted. [2][3][4][5][6] The emission of these environmentally toxic gases and VOCs from both industrial processes and automobiles has been linked to the nitrous oxides (NO x ), CO, and hydrocarbon emissions responsible for acid rain in the 1960s. Legislation was introduced to address and mitigate this acidic precipitation and the emission of environmentally toxic gasses by requiring the use of gas sensors and catalytic converters. [2] Gas sensing technology can be found in two leading commercial platforms: electronic (lambda sensors) and optical (nondispersive infrared (NDIR) sensors and optrodes). Lambda sensors are made with electrolytes or gas-sensitive films that exploit the ionic conductivity of electrolytes or the adsorption of gases and bonding of hydroxyl groups on metal oxide (MO) materials. State-of-the-art, automotive lambda sensors, also known as "automotive oxygen sensors," use a solid yttria-stabilized zirconia (YSZ) electrolyte in wideband sensor design geometries. The wideband sensor design was adapted from the early narrowband YSZ sensor design that utilized a simple Nernst cell. The wideband sensor design offers improved sensor linearity when compared to the narrowband designs across a wide range of air-to-fuel ratio values. Though the electrolytic lambda sensors' physical design has changed in previous years, the sensor has not seen an improvement in terms of electrolytic materials.Lambda sensors have also been based on gas-sensitive oxide films, instead of electrolytes, that employ the use of MO materials. MO materials include a wide range of oxidized transitional metals. These MOs undergo electronic changes when gases or VOCs are chemisorbed or bound to hydroxyl groups on the material's surface, thereby increasing or decreasing the MO's resistivity. The gas-material interaction only occurs at high temperatures, called the "activation temperatures," required by the MO.High activation temperatures are common in both electrolytic and MO gas sensors. Bringing the electrolytic and MO gas sensors to these high temperatures requires electronic heater elements. The reduction of the activation temperature of a lambda sensor can be achieved by using promoter materials and catalytic metals. Some material platforms, such as metal-organic frameworks (MOFs), are als...

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The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

Cited by 60 publications

References 33 publications

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

Optoelectronic Gas Sensing Platforms: From Metal Oxide Lambda Sensors to Nanophotonic Metamaterials

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The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

Cited by 60 publications

References 33 publications

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

Optoelectronic Gas Sensing Platforms: From Metal Oxide Lambda Sensors to Nanophotonic Metamaterials

Contact Info

Product

Resources

About

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)