The Effect of (NH₄)₂S Treatment on the Interface Characteristics of GaAs MIS Structures

Abstract

MIS capacitors prepared on the (NH4)2S-treated GaAs substrate showed a marked reduction in the density of the dominant pinning levels near 0.6 eV below the conduction band. The annealing effect on the interface characteristics was also investigated. Analyses by means of secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) indicate that sulfur atoms at the interface stabilize the oxygen-free GaAs surface both electronically and thermally.

Passivation of GaSb and InAs by pH-activated thioacetamide

“…Historically, most common sulfur passivation treatments have been performed in aqueous solutions of inorganic sulfides, such as (NH 4 ) 2 S x [16,17,23,[26][27][28] or Na 2 S [18,26,27,29]. More recently, an alternative treatment based on thioacetamide (TAM), an organic sulfide, has been proposed and its effectiveness examined in some We describe the passivation by thioacetamide (TAM) of GaSb and InAs-two III-V semiconductor materials important for fabricating IR devices from Type-II superlattices (T2SLs).…”

Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs

“…In addition, sulfur GaAs-surface passivation experiments based on (NH 4 ) 2 S x treatments have indicated an important reduction of surfaces states, observed by PR and surface recombination velocity (SVR). 23 On the other hand, the enhancement of the photoreflectance amplitude (PRA) in region II for samples with C th ¼ 25, 60, and 80 nm is directly proportional to the photocurrent density (J p ) and it is directly proportional to the decrement of F SEF . The J p is described by the equation 24…”

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

“…27 A dip in ͑NH 4 ͒ 2 S solution was finally performed for surface passivation. 28 The thicknesses of native oxide on InGaAs after each wet chemical cleaning step and with air exposure durations of 0, 5, and 10 min were measured by ellipsometer and summarized in Fig. 3.…”