The effect of reverse current on the dark properties of photovoltaic solar modules

Sidawi, J.; Habchi, Roland; Abboud, Nadine; Jaafar, Ali; Allouch, Faisal Al; Moussa, Georges; Aillerie, Michel; Petit, Pierre; Zégaoui, Abdallah; Salame, Chafic

doi:10.1016/j.egypro.2011.05.084

Cited by 17 publications

(11 citation statements)

References 6 publications

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“…When the I-V is plotted in a logarithmic scale, the resulting curve could be divided into three parts, and each part connotes a different quality of a module. This explanation is different from Sidawi et al's work where the authors presented only two parts of the curve [72]; here, the three parts are clearly seen. For the sake of easy comprehension, part two is first presented.…”

Section: Discussioncontrasting

confidence: 99%

“…This also relates to the recombination current within the module. The presence of a hot spot is believed to create weak regions in PV modules; this forces the electrons to flow in the reserve path of the p-i-n junction [40,72]. The third region of the semilog I-V curve extends from 15 V to 25 V, which is the range of a nominal operation voltage, and this region is associated with a high Figure 12, the combined semilog I-V is presented; the semilog of the short current I sc was extracted from the respective figures.…”

Section: Discussionmentioning

confidence: 99%

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Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H)

Osayemwenre

Meyer

2019

International Journal of Photoenergy

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This study examines the degradation of single junction amorphous silicon (a-Si:H) photovoltaic (PV) modules. It summarises the main results obtained from over 7 years of field investigation of the degradation mechanisms of a-Si:H modules. The investigation was based on performance parameters such as fill factors, parasitic resistances, and ideality factors. The initial efficiencies for these modules were in accordance with the expected values; however, a significant decrease was observed during the monitoring period.

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Section: Discussioncontrasting

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H)

Osayemwenre

Meyer

2019

International Journal of Photoenergy

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“…Several research papers studied the effect of reverse currents as a result of electrical stresses in solar cells and modules where I-V characteristics has shown to be strongly affected by these currents [7,8]. These studies however tackled the problem in the dark conditions.…”

Section: Introductionmentioning

confidence: 99%

Capacitance Evolution of Photovoltaic Solar Modules Under the Influence of Electrical Stress

Zaraket¹,

Aillerie²,

Salame³

2015

Energy Procedia

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The main purpose of this work was to study the effect of electric currents reverse stress on the capacitance and in general the performance of photovoltaic modules. Different levels of reverse stress current are injected into the solar cell structure and the C-V characteristic are measured in the dark and illuminated conditions, at room temperature for several common periods of time. A digital double exponential model was used to analyze the experimental measurements. The dramatic changes in capacitance characteristics are caused from the effect of a reverse current introduced for different stress levels, simulated the effect of accumulated extreme reverse currents that can occur in the solar cells and modules for different reasons. The paper contributes to research on the adverse effects of reverse currents on the capacitance and normal functioning of cells and solar modules.

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“…Field studies have shown that hot spotting is a major cause of panel performance degradation, even in systems employing bypass diodes [7]- [9]. Once a cell is degraded from hot spotting, it becomes a weak point in the string that causes performance reduction of the entire PV panel [10]. Hot spotting occurs more easily in a degraded cell, which exacerbates the hot spot degradation problem.…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic Hot-Spot Detection for Solar Panel Substrings Using AC Parameter Characterization

Kim

Seo

Cho

et al. 2016

IEEE Trans. Power Electron.

181

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Hot spotting is a problem in photovoltaic (PV) systems that reduces panel power performance and accelerates cell degradation. In present day systems, bypass diodes are used to mitigate hot spotting, but it does not prevent hot spotting or the damage it causes. This paper presents an active hot spot detection method to detect hot spotting within a series of PV cells, using ac parameter characterization. A PV cell is comprised of series and parallel resistances and parallel capacitance, which are affected by voltage bias, illumination, and temperature. Experimental results have shown that when a PV string is under a maximum power point tracking control, hot spotting in a single cell results in a capacitance increase and dc impedance increase. The capacitance change is detectable by measuring the ac impedance magnitude in the 10-70 kHz frequency range. An impedance value change due to hot spotting can be detected by monitoring one high-frequency measurement in the capacitive region and one low-frequency measurement in the dc impedance region. Alternatively, the dc impedance can also be calculated using dc operating point measurements. The proposed hot spot detection method can be integrated into a dc-dc power converter that operates at the panel or subpanel level.

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The effect of reverse current on the dark properties of photovoltaic solar modules

Abstract: International audienc

Cited by 17 publications

References 6 publications

Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H)

Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H)

Capacitance Evolution of Photovoltaic Solar Modules Under the Influence of Electrical Stress

Photovoltaic Hot-Spot Detection for Solar Panel Substrings Using AC Parameter Characterization

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