The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

“…However, it is almost independent of frequency at high frequencies. Thus, the diode is frequency dependent interface states density, which similar behavior and comparable to that to the other organic Schottky diodes [18,26,37], and currently further investigations to enhance the electrical responses of PTAA-based Schottky diode by adding the small molecule such as soluble pentacene to form a blend PTAA-pentacene system is currently undergoing [38]. …”

“…where, A is the area of the diode, Gm and Cm are the measured conductance and capacitance, respectively, and C is the capacitance of polymer layer and can be obtained from G-V and C-V measurements in strong accumulation regions of a constant bias voltage of 4.0 V at constant frequency of 10 kHz by using the following relation [18]:…”

“…Therefore, parameters such as interface states and series resistance play an important role in the determination of reasonable electrical characteristics of the metal-organic-metal (MOM) type diode. The information of such parameters can be obtained from the conductance and capacitance methods such as conductance-voltage-frequency (G-V-f) and capacitance-voltage-frequency (C-V-f) measurements [17][18][19][20]. These measurements are common tools to characterize the quality of the insulator/organic interfaces and various measurement techniques are available for determining the interface trap density [21][22][23][24][25].…”

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

“…In Figure 4(b), it could be seen only two peaks in 10 and 20 kHz frequencies at the accumulation region, but there is no peak in the high frequencies. This can be attributed not pursuing ac signal at high frequency values and do not exhibiting peaks more insulator layers [5], [15]. C -2 -V graphs of Al/Si3N4/p type Si contacts have been given in Figure 5(a) and Figure 5(b) for having 5 nm and 50 nm insulator Si3N4 layers, respectively.…”

“…This case can be attributed non-uniform doping or not following ac signal at high frequencies by interface states [16]. Incoherently changing for having 50 nm thicknesses layers can be attributed the distribution of particular density in interface states and interfacial layer effects [5]. Values of and could be seen in Table 1 and Table 2 at various frequencies for 5 nm and 50 nm Si3N4 layers.…”